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Semiconductor apparatus and equipment having laminated layers

  • US 10,453,888 B2
  • Filed: 03/22/2018
  • Issued: 10/22/2019
  • Est. Priority Date: 03/30/2017
  • Status: Active Grant
First Claim
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1. A semiconductor apparatus comprising:

  • a semiconductor substrate in which a plurality of semiconductor elements are provided;

    a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided;

    a second semiconductor layer in which a plurality of semiconductor elements are provided and which is arranged between the semiconductor substrate and the first semiconductor layer;

    a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer;

    a second wiring structure that is arranged between the first wiring structure and the semiconductor substrate; and

    a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, wherein;

    the second semiconductor layer is arranged between the first wiring structure and the third wiring structure,the first semiconductor layer includes a first main surface on a side of the first wiring structure;

    the first wiring structure includes a first wiring;

    the second semiconductor layer includes a second main surface on a side of the second wiring structure;

    the second wiring structure includes a second wiring;

    the third wiring structure includes a third wiring;

    a through electrode that passes through the first semiconductor layer and reaches the first wiring; and

    a through electrode that passes through the second semiconductor layer and reaches the third wiring are further included, anda width, at a position coplanar with the first main surface, of the through electrode reaching the first wiring is different from a width, at a position coplanar with the second main surface, of the through electrode reaching the third wiring.

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