Semiconductor apparatus and equipment having laminated layers
First Claim
1. A semiconductor apparatus comprising:
- a semiconductor substrate in which a plurality of semiconductor elements are provided;
a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided;
a second semiconductor layer in which a plurality of semiconductor elements are provided and which is arranged between the semiconductor substrate and the first semiconductor layer;
a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer;
a second wiring structure that is arranged between the first wiring structure and the semiconductor substrate; and
a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, wherein;
the second semiconductor layer is arranged between the first wiring structure and the third wiring structure,the first semiconductor layer includes a first main surface on a side of the first wiring structure;
the first wiring structure includes a first wiring;
the second semiconductor layer includes a second main surface on a side of the second wiring structure;
the second wiring structure includes a second wiring;
the third wiring structure includes a third wiring;
a through electrode that passes through the first semiconductor layer and reaches the first wiring; and
a through electrode that passes through the second semiconductor layer and reaches the third wiring are further included, anda width, at a position coplanar with the first main surface, of the through electrode reaching the first wiring is different from a width, at a position coplanar with the second main surface, of the through electrode reaching the third wiring.
1 Assignment
0 Petitions
Accused Products
Abstract
In a semiconductor apparatus including: a semiconductor substrate in which a plurality of semiconductor elements are provided; a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided; a second semiconductor layer that is arranged between the semiconductor substrate and the first semiconductor layer; a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer; a second wiring structure that is arranged between the second semiconductor layer and the semiconductor substrate; and a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, widths of a plurality of through electrodes are different from each other.
-
Citations
30 Claims
-
1. A semiconductor apparatus comprising:
-
a semiconductor substrate in which a plurality of semiconductor elements are provided; a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided; a second semiconductor layer in which a plurality of semiconductor elements are provided and which is arranged between the semiconductor substrate and the first semiconductor layer; a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer; a second wiring structure that is arranged between the first wiring structure and the semiconductor substrate; and a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, wherein; the second semiconductor layer is arranged between the first wiring structure and the third wiring structure, the first semiconductor layer includes a first main surface on a side of the first wiring structure; the first wiring structure includes a first wiring; the second semiconductor layer includes a second main surface on a side of the second wiring structure; the second wiring structure includes a second wiring; the third wiring structure includes a third wiring; a through electrode that passes through the first semiconductor layer and reaches the first wiring; and a through electrode that passes through the second semiconductor layer and reaches the third wiring are further included, and a width, at a position coplanar with the first main surface, of the through electrode reaching the first wiring is different from a width, at a position coplanar with the second main surface, of the through electrode reaching the third wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A semiconductor apparatus comprising:
-
a semiconductor substrate in which a plurality of semiconductor elements are provided; a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided; a second semiconductor layer in which a plurality of semiconductor elements are provided and which is arranged between the semiconductor substrate and the first semiconductor layer; a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer; a second wiring structure that is arranged between the first wiring structure and the semiconductor substrate; and a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, wherein; the second semiconductor layer is arranged between the first wiring structure and the third wiring structure, the first semiconductor layer includes a first main surface on a side of the first wiring structure; the first wiring structure includes a first wiring and a second wiring; the second semiconductor layer includes a second main surface on a side of the second wiring structure; the third wiring structure includes a third wiring that is electrically connected to the first wiring and a fourth wiring that is electrically connected to the second wiring; a through electrode that passes through the first semiconductor layer and reaches the first wiring; and a through electrode that passes through the first semiconductor layer and reaches the second wiring are included, and a width, at a position coplanar with the first main surface, of the through electrode reaching the first wiring is different from a width, at a position coplanar with the first main surface, of the through electrode reaching the second wiring. - View Dependent Claims (19, 20, 21, 22)
-
-
23. A semiconductor apparatus comprising:
-
a semiconductor substrate in which a plurality of semiconductor elements are provided; a first semiconductor layer which is overlapped on the semiconductor substrate and in which a plurality of photoelectric conversion elements are provided; a second semiconductor layer in which a plurality of semiconductor elements are provided and which is arranged between the semiconductor substrate and the first semiconductor layer; a first wiring structure that is arranged between the first semiconductor layer and the second semiconductor layer; a second wiring structure that is arranged between the first wiring structure and the semiconductor substrate; and a third wiring structure that is arranged between the second wiring structure and the semiconductor substrate, wherein; the second semiconductor layer is arranged between the first wiring structure and the third wiring structure, the first semiconductor layer includes a first main surface on a side of the first wiring structure; the first wiring structure includes a first wiring; the second semiconductor layer includes a second main surface on a side of the second wiring structure; the second wiring structure includes a second wiring; the third wiring structure includes a third wiring and a fourth wiring; a through electrode that passes through the second semiconductor layer and reaches the third wiring; and a through electrode that passes through the second semiconductor layer and reaches the fourth wiring, and a width, at a position coplanar with the second main surface, of the through electrode reaching the third wiring is different from a width, at a position coplanar with the second main surface, of the through electrode reaching the fourth wiring. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
-
Specification