Imaging device and electronic apparatus

• US 10,453,892 B2
• Filed: 11/13/2017
• Issued: 10/22/2019
• Est. Priority Date: 01/21/2014
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Inventors: Imoto, Tsutomu, Mabuchi, Keiji
• Primary Examiner(s): Mandala, Victor A
• Assistant Examiner(s): Snow, Colleen E
• Application Number:
  US15/811,275
• Publication Number:
  US 20180130848A1
• Time in Patent Office: 708 Days
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14654 Blooming suppression
• CPC Class Codes: H01L 27/14656 Overflow drain structures
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14812 Special geometry or disposition of pixel-elements, address lines or gate-electrodes
• CPC Class Codes: H01L 27/14887 Blooming suppression

Abstract

There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Claims

1. An imaging device comprising:

a first pixel that is a photovoltaic type pixel having a first photoelectric conversion region;

a second pixel that is an accumulation type pixel having a second photoelectric conversion region and that is adjacent to the first pixel; and

an isolation region that is provided between the first photoelectric conversion region and the second photoelectric conversion region.

2. The imaging device according to claim 1, wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the first pixel to the second pixel.

3. The imaging device according to claim 1, wherein the first photoelectric conversion region has a PN junction diode.

4. The imaging device according to claim 3, wherein the first pixel further includes a transfer gate and floating diffusion.

5. The imaging device according to claim 1, further comprising:

a third pixel that is an accumulation type pixel and that is adjacent to the first pixel and the second pixel.

6. The imaging device according to claim 1, wherein a portion between the first photoelectric conversion region and a pixel circuit region is insulated.

7. An electronic apparatus, comprising:

an imaging device including;

a first pixel that is a photovoltaic type pixel having a first photoelectric conversion region;

a second pixel that is an accumulation type pixel having a second photoelectric conversion region and that is adjacent to the first pixel; and

an isolation region that is provided between the first photoelectric conversion region and the second photoelectric conversion region.

8. The electronic apparatus according to claim 7, wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the first pixel to the second pixel.

9. The electronic apparatus according to claim 7, wherein the isolation region is configured of a material that blocks diffusion of a signal charge of the photovoltaic type pixels to the adjacent pixel.

10. The electronic apparatus according to claim 7, wherein the first photoelectric conversion region has a PN junction diode.

11. The electronic apparatus according to claim 7, wherein the first pixel further includes a transfer gate and floating diffusion.

12. The electronic apparatus according to claim 7, further comprising:

a third pixel that is an accumulation type pixel and that is adjacent to the first pixel and the second pixel.

13. The electronic apparatus according to claim 7, wherein a portion between the first photoelectric conversion region and a pixel circuit region is insulated.