Epitaxial growth methods and structures thereof
First Claim
1. A method of semiconductor device fabrication, comprising:
- loading a semiconductor wafer into a processing chamber;
while the semiconductor wafer is loaded within the processing chamber, performing a first pre-epitaxial layer deposition baking process at a first pressure and first temperature according to a first processing condition of the processing chamber;
after the first pre-epitaxial layer deposition baking process, performing a second pre-epitaxial layer deposition baking process at a second pressure and second temperature according to a second processing condition of the processing chamber, wherein the second pressure is different than the first pressure; and
after the second pre-epitaxial layer deposition baking process, introducing, while at a growth temperature, a precursor gas into the processing chamber to deposit an epitaxial layer over the semiconductor wafer, wherein the growth temperature is different than the first and second temperatures, and wherein the growth temperature corresponds to a third processing condition of the processing chamber that is substantially different than the first and second processing conditions.
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Abstract
A method and structure for providing a two-step defect reduction bake, followed by a high-temperature epitaxial layer growth. In various embodiments, a semiconductor wafer is loaded into a processing chamber. While the semiconductor wafer is loaded within the processing chamber, a first pre-epitaxial layer deposition baking process is performed at a first pressure and first temperature. In some cases, after the first pre-epitaxial layer deposition baking process, a second pre-epitaxial layer deposition baking process is then performed at a second pressure and second temperature. In some embodiments, the second pressure is different than the first pressure. By way of example, after the second pre-epitaxial layer deposition baking process and while at a growth temperature, a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer over the semiconductor wafer.
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Citations
20 Claims
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1. A method of semiconductor device fabrication, comprising:
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loading a semiconductor wafer into a processing chamber; while the semiconductor wafer is loaded within the processing chamber, performing a first pre-epitaxial layer deposition baking process at a first pressure and first temperature according to a first processing condition of the processing chamber; after the first pre-epitaxial layer deposition baking process, performing a second pre-epitaxial layer deposition baking process at a second pressure and second temperature according to a second processing condition of the processing chamber, wherein the second pressure is different than the first pressure; and after the second pre-epitaxial layer deposition baking process, introducing, while at a growth temperature, a precursor gas into the processing chamber to deposit an epitaxial layer over the semiconductor wafer, wherein the growth temperature is different than the first and second temperatures, and wherein the growth temperature corresponds to a third processing condition of the processing chamber that is substantially different than the first and second processing conditions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of semiconductor device fabrication, comprising:
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prior to deposition of an epitaxial layer, performing a two-step baking process of a semiconductor wafer within a processing chamber; and after the performing the two-step baking process, depositing the epitaxial layer over the semiconductor wafer; wherein the two-step baking process includes a first baking step performed at a first pressure and a second baking step performed at a second pressure different than the first pressure, and wherein the first baking step removes a first contaminant and the second baking step removes a second contaminant, wherein each of the first and second baking steps are performed at a first temperature, and wherein the depositing the epitaxial layer is performed at a second temperature that is not substantially equal to the first temperature. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of semiconductor device fabrication, comprising:
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loading a semiconductor wafer into a processing chamber; performing a first purge of the processing chamber and ramping a processing chamber temperature up to a first baking temperature; after the first purge, performing a first baking process in a hydrogen gas (H2) ambient at a first baking pressure and at the first baking temperature, wherein the first baking process removes carbon contamination; subsequent to the first baking process, performing a second baking process in the hydrogen gas (H2) ambient at a second baking pressure and at a second baking temperature, wherein the second baking pressure is less than the first baking pressure, and wherein the second baking process removes oxygen contamination; after the second baking process, depositing an epitaxial layer over the semiconductor wafer by flowing silane (SiH4) and hydrogen chloride (HCl) gas over the semiconductor wafer at a growth pressure and at a growth temperature; and following the depositing the epitaxial layer, performing a second purge of the processing chamber and ramping the processing chamber temperature down to room temperature. - View Dependent Claims (20)
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Specification