Semiconductor device including nitride insulating layer and method for manufacturing the same
First Claim
Patent Images
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first gate electrode;
forming a gate insulating film over the first gate electrode;
forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the first gate electrode;
forming a pair of electrodes in contact with the oxide semiconductor film; and
forming a nitride insulating film over the oxide semiconductor film by a plasma CVD method using a source gas containing nitrogen and ammonia,wherein in the step of forming the nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50, andwherein in the case where the nitride insulating film is analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×
1021 molecules/cm3 and ammonia molecules less than 1×
1022 molecules/cm3 are released.
0 Assignments
0 Petitions
Accused Products
Abstract
In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
138 Citations
18 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a first gate electrode; forming a gate insulating film over the first gate electrode; forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the first gate electrode; forming a pair of electrodes in contact with the oxide semiconductor film; and forming a nitride insulating film over the oxide semiconductor film by a plasma CVD method using a source gas containing nitrogen and ammonia, wherein in the step of forming the nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50, and wherein in the case where the nitride insulating film is analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×
1021 molecules/cm3 and ammonia molecules less than 1×
1022 molecules/cm3 are released. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an insulating film; forming an oxide semiconductor film over the insulating film; forming a pair of electrodes in contact with the oxide semiconductor film; forming a gate insulating film comprising a nitride insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film, wherein the nitride insulating film is formed by a plasma CVD method using a source gas containing nitrogen and ammonia, wherein in the step of forming the nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50, and wherein in the case where the nitride insulating film is analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×
1021 molecules/cm3 and ammonia molecules less than 1×
1022 molecules/cm3 are released. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a first gate electrode; forming a gate insulating film comprising a first nitride insulating film over the first gate electrode; forming an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping with the first gate electrode; forming a pair of electrodes electrically connected to the oxide semiconductor film; and forming a second nitride insulating film over the oxide semiconductor film, wherein the first nitride insulating film and the second nitride insulating film are each formed by a plasma CVD method using a source gas containing nitrogen and ammonia, wherein in each of the step of forming the first nitride insulating film and the step of forming the second nitride insulating film, a flow ratio of the nitrogen to the ammonia is greater than or equal to 5 and less than or equal to 50, and wherein in the case where each of the first nitride insulating film and the second nitride insulating film are analyzed by thermal desorption spectroscopy, hydrogen molecules less than 5×
1021 molecules/cm3 and ammonia molecules less than 1×
1022 molecules/cm3 are released. - View Dependent Claims (14, 15, 16, 17, 18)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsSasaki, Toshinari, Hamochi, Takashi, Miyamoto, Toshiyuki, Nomura, Masafumi, Koezuka, Junichi, Okazaki, Kenichi
-
Primary Examiner(s)Mazumder, Didarul A
-
Application NumberUS15/874,227Publication NumberTime in Patent Office642 DaysField of Search257 43, 438 85, 438 86, 438104, 438754US Class CurrentCPC Class CodesH01L 29/247 Amorphous materialsH01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
