Semiconductor device including resonant tunneling diode structure having a superlattice
First Claim
1. A semiconductor device comprising:
- at least one double-barrier resonant tunneling diode (DBRTD) comprising;
a first doped semiconductor layer comprising silicon;
a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
an intrinsic semiconductor layer on the first barrier layer comprising at least one of silicon and germanium;
a second barrier layer on the intrinsic semiconductor layer; and
a second doped semiconductor layer on the second barrier layer comprising silicon.
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Accused Products
Abstract
A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one DBRTD may further include an intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the intrinsic semiconductor layer, and a second doped semiconductor layer on the second superlattice layer.
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Citations
23 Claims
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1. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising; a first doped semiconductor layer comprising silicon; a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions; an intrinsic semiconductor layer on the first barrier layer comprising at least one of silicon and germanium; a second barrier layer on the intrinsic semiconductor layer; and a second doped semiconductor layer on the second barrier layer comprising silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising a first doped semiconductor layer; a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer, the second barrier layer comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; and a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising a first doped semiconductor layer; a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer comprising an oxide layer; and a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising; a first doped semiconductor layer; a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer comprising an oxide; and a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (23)
Specification