Semiconductor device which comprises transistor and diode

• US 10,453,948 B2
• Filed: 09/17/2015
• Issued: 10/22/2019
• Est. Priority Date: 06/24/2010
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Imada, Tadahiro
• Primary Examiner(s): Hall, Victoria K.
• Application Number:
  US14/856,768
• Publication Number:
  US 20160005848A1
• Time in Patent Office: 1,496 Days
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/085 including field-effect components only
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/66462 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A transistor which includes an electron transit layer and an electron supply layer which are stacked in a thickness direction of a substrate; an electron transit layer formed over the substrate in parallel to the electron transit layer and the electron supply layer; an anode electrode which forms a Schottky junction with the electron transit layer; and a cathode electrode which forms an ohmic junction with the electron transit layer are provided. The anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor.

Claims

1. A semiconductor device, comprising:

a substrate;

a transistor that comprises a first electron transit layer and an electron supply layer which are stacked in a thickness direction of the substrate;

a second electron transit layer formed above the first electron transit layer and the electron supply layer in parallel to the first electron transit layer and the electron supply layer;

an anode electrode that forms a Schottky junction with the second electron transit layer; and

a cathode electrode that forms an ohmic junction with the second electron transit layer, wherein

the anode electrode is connected to a source of the transistor, and

the cathode electrode is connected to a drain of the transistor,

wherein the transistor is located between the substrate and the second electron transit layer; and

the first electron transit layer and the electron supply layer are located between the substrate and the second electron transit layer, in the thickness direction of the substrate.

2. A semiconductor device, comprising:

a substrate;

a buffer layer formed above the substrate;

a first electron transit layer formed above the buffer layer;

an electron supply layer formed above the first electron transit layer;

a cap layer formed above the electron supply layer;

an insulating layer formed above the cap layer; and

a second electron transit layer formed above the insulating layer,

wherein the cap layer is located between the electron supply layer and the insulating layer, in the thickness direction of the substrate.

3. The semiconductor device according to claim 2, wherein the cap layer is an n-type gallium nitride layer.

4. The semiconductor device according to claim 3, further comprising:

a second n-type gallium nitride layer formed on the insulating layer,

wherein the insulating layer is made of an aluminum nitride or an aluminum gallium nitride.