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Semiconductor device which comprises transistor and diode

  • US 10,453,948 B2
  • Filed: 09/17/2015
  • Issued: 10/22/2019
  • Est. Priority Date: 06/24/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a transistor that comprises a first electron transit layer and an electron supply layer which are stacked in a thickness direction of the substrate;

    a second electron transit layer formed above the first electron transit layer and the electron supply layer in parallel to the first electron transit layer and the electron supply layer;

    an anode electrode that forms a Schottky junction with the second electron transit layer; and

    a cathode electrode that forms an ohmic junction with the second electron transit layer, whereinthe anode electrode is connected to a source of the transistor, andthe cathode electrode is connected to a drain of the transistor,wherein the transistor is located between the substrate and the second electron transit layer; and

    the first electron transit layer and the electron supply layer are located between the substrate and the second electron transit layer, in the thickness direction of the substrate.

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