FinFET device and fabrication method thereof
First Claim
1. A fabrication method for a FinFET, comprising:
- providing a semiconductor substrate and fins on the semiconductor substrate, wherein each fin includes a first sidewall region and a second sidewall region above the first sidewall region;
forming an interlayer dielectric layer on the semiconductor substrate and on the fins, with openings in the interlayer dielectric layer to expose a portion of sidewalls and a portion of a top surface of each fin; and
forming a target work function layer on sidewalls and on a bottom of each opening, the target work function layer including a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin, wherein;
the second target region and the third portion of the target work function layer are doped with modification ions and above the first target region; and
the first target region of the target work function layer has a first effective work function value, while the second target region and the third portion of the target work function layer has a second effective work function value greater than the first effective work function value.
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Abstract
A FinFET device and fabrication method thereof is provided. The method includes: providing a semiconductor substrate and fins. Each fin includes a first sidewall region and a second sidewall region. An interlayer dielectric layer is formed on the semiconductor substrate and on the fins, with openings. Then a target work function layer is formed on sidewalls and on a bottom of each opening. The target work function layer includes a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin. The second target region and the third portion of the target work function layer is doped with modification ions; and has a second effective work function value greater than a first effective work function value of the first target region of the target work function layer.
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Citations
19 Claims
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1. A fabrication method for a FinFET, comprising:
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providing a semiconductor substrate and fins on the semiconductor substrate, wherein each fin includes a first sidewall region and a second sidewall region above the first sidewall region; forming an interlayer dielectric layer on the semiconductor substrate and on the fins, with openings in the interlayer dielectric layer to expose a portion of sidewalls and a portion of a top surface of each fin; and forming a target work function layer on sidewalls and on a bottom of each opening, the target work function layer including a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin, wherein; the second target region and the third portion of the target work function layer are doped with modification ions and above the first target region; and the first target region of the target work function layer has a first effective work function value, while the second target region and the third portion of the target work function layer has a second effective work function value greater than the first effective work function value. - View Dependent Claims (2, 3, 4, 5)
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6. A fabrication method for a FinFET, comprising:
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providing a semiconductor substrate and fins on the semiconductor substrate, wherein each fin includes a first sidewall region and a second sidewall region above the first sidewall region; forming an interlayer dielectric layer on the semiconductor substrate and on the fins, with openings in the interlayer dielectric layer to expose a portion of sidewalls and a portion of a top surface of each fin; and forming a target work function layer on sidewalls and on a bottom of each opening, the target work function layer including a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin, wherein; the second target region and the third portion of the target work function layer is doped with modification ions; the first target region of the target work function layer has a first effective work function value, while the second target region and the third portion of the target work function layer has a second effective work function value greater than the first effective work function value; and the target work function layer is formed by; forming an initial work function layer with a first effective work function value on the sidewalls and the bottom of each opening, wherein the initial work function layer includes a first initial region covering the first sidewall region and a second initial region covering the second sidewall region of each fin; and implanting the modification ions into the second initial region of the initial work function layer and into a third portion of the initial work function layer on the top surface of each fin using an ion implantation process, to form the target work function layer;
wherein;the first initial region of the initial work function layer forms the first target region of the target work function layer, and the second initial region of the initial work function layer forms the second target region of the target work function layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A FinFET device, comprising:
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a semiconductor substrate; fins on the semiconductor substrate, wherein each fin has a first sidewall region and a second sidewall region above the first sidewall region; an interlayer dielectric layer on the semiconductor substrate and on the fins, containing openings to expose a portion of sidewalls and a portion of the top surface of each fin; and a target work function layer on sidewalls and a bottom of each opening, wherein; the target work function layer includes a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin; the second target region and the third portion of the target work function layer on the top surface of each fin are doped with modification ions and above the first target region; and the first target region of the target work function layer has a first effective work function value, while the second target region and the third portion of the target work function layer has a second effective work function value greater than the first effective work function value. - View Dependent Claims (16, 17, 18, 19)
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Specification