Semiconductor device and method for manufacturing the same

• US 10,453,964 B2
• Filed: 07/27/2017
• Issued: 10/22/2019
• Est. Priority Date: 12/18/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koezuka, Junichi
• Primary Examiner(s): Nicely, Joseph C.
• Application Number:
  US15/661,307
• Publication Number:
  US 20170323976A1
• Time in Patent Office: 817 Days
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/425 producing ion implantation
• CPC Class Codes: H01L 21/426 using masks
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a first oxide semiconductor layer by a sputtering method;

crystallizing a region of the first oxide semiconductor layer by a first heat treatment, the region including a surface of the first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer by a sputtering method;

crystallizing the second oxide semiconductor layer by a second heat treatment;

wherein the second oxide semiconductor layer includes In, Ga, and Zn, and

wherein the second oxide semiconductor layer includes a crystal whose c-axis is aligned in a direction perpendicular to a surface of the second oxide semiconductor layer.

2. The semiconductor device according to claim 1,

wherein the first heat treatment is performed at higher than or equal to 450°

C. and lower than or equal to 850°

C. for greater than or equal to 1 minute and less than or equal to 24 hours, and

wherein the second heat treatment is performed at higher than or equal to 450°

C. and lower than or equal to 850°

C. for greater than or equal to 1 minute and less than or equal to 400 hours.

3. A method for manufacturing a semiconductor device comprising:

forming a first oxide semiconductor layer by a sputtering method;

heating the first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer by a sputtering method;

heating the second oxide semiconductor layer;

wherein the second oxide semiconductor layer includes In, Ga, and Zn, and

wherein the second oxide semiconductor layer includes a crystal whose c-axis is aligned in a direction perpendicular to a surface of the second oxide semiconductor layer.