Extended short-wave infrared strain-layered superlattice on indium arsenide substrate and associated methods
First Claim
Patent Images
1. An infrared detector comprising:
- an InAs substrate; and
a strain-layered superlattice including;
a first sub-layer comprising InAs on the InAs substrate;
a second sub-layer directly on the first sub-layer comprising InAlAsSb;
a third sub-layer comprising InAs on the second sub-layer; and
a fourth sub-layer comprising InAlAsSb directly on the third sub-layer.
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Abstract
Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.
3 Citations
20 Claims
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1. An infrared detector comprising:
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an InAs substrate; and a strain-layered superlattice including; a first sub-layer comprising InAs on the InAs substrate; a second sub-layer directly on the first sub-layer comprising InAlAsSb; a third sub-layer comprising InAs on the second sub-layer; and a fourth sub-layer comprising InAlAsSb directly on the third sub-layer. - View Dependent Claims (2, 3, 4)
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5. A structure comprising:
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an InAs substrate; a strain-layered superlattice including; a first sub-layer comprising InAs on the InAs substrate; a second sub-layer directly on the first sub-layer comprising InAlAsSb; and a plurality of periods on the second sub-layer, each of the plurality of periods including; a third sub-layer comprising InAs; and a fourth sub-layer adjacent to the third sub-layer comprising InAlAsSb. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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providing an InAs substrate; forming a strain-layered superlattice by; depositing a first sub-layer of InAs on the InAs substrate; depositing a second sub-layer of InAlAsSb directly on the first sub-layer; depositing a third sub-layer of InAs on the second sub-layer; and depositing a fourth sub-layer of InAlAsSb directly on the third sub-layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification