Vertical structure LEDs

• US 10,453,993 B1
• Filed: 04/17/2019
• Issued: 10/22/2019
• Est. Priority Date: 04/09/2002
• Status: Expired due to Fees

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Jong Lam, Jeong, In-kwon, Yoo, Myung Cheol
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US16/387,312
• Publication Number:
  US 20190312177A1
• Time in Patent Office: 188 Days
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01C 7/008 Thermistors H01C7/02 - H01C7/06 take precedence
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 438/958 Passivation layer
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.

Claims

1. A method of manufacturing a light emitting device, the method comprising:

forming an n-type GaN-based layer on a sapphire substrate;

forming a GaN-based active layer on the n-type GaN-based layer;

forming a p-type GaN-based layer on the GaN-based active layer;

forming a p-type electrode on the p-type GaN-based layer;

forming a metal substrate on the p-type electrode;

removing the sapphire substrate;

forming an n-type electrode on the n-type GaN-based layer;

forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode, after the forming the n-type electrode; and

forming an open space to expose the n-type electrode by patterning the passivation layer.

2. The method according to claim 1, wherein the forming the passivation layer comprises:

forming a first portion of the passivation layer in contact with the p-type GaN-based layer;

forming a second portion of the passivation layer in contact with the GaN-based active layer;

forming a third portion of the passivation layer in contact with the n-type GaN-based layer; and

forming a fourth portion of the passivation layer in contact with the n-type electrode.

3. The method according to claim 2, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the first portion of the passivation layer.

4. The method according to claim 3, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the second portion of the passivation layer.

5. The method according to claim 4, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the fourth portion of the passivation layer.

6. The method according to claim 5, wherein the forming the passivation layer comprises:

forming the fourth portion of the passivation layer larger than the first portion of the passivation layer.

7. The method according to claim 6, wherein the forming the passivation layer comprises:

forming the fourth portion of the passivation layer larger than the second portion of the passivation layer.

8. The method according to claim 7, wherein the forming the passivation layer comprises:

forming a thickness of the metal substrate to be at least 10 times thicker than a total thickness of the n-type GaN-based layer, the GaN-based active layer, and the p-type GaN-based layer.

9. A method of manufacturing a light emitting device, the method comprising:

forming an n-type GaN-based layer on a sapphire substrate;

forming a GaN-based active layer on the n-type GaN-based layer;

forming a p-type GaN-based layer on the GaN-based active layer;

forming a p-type electrode on the p-type GaN-based layer;

forming a metal substrate on the p-type electrode;

removing the sapphire substrate;

forming an n-type electrode on the n-type GaN-based layer; and

forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode, after the forming the n-type electrode.

10. The method according to claim 9, wherein the forming the passivation layer comprises:

forming a first portion of the passivation layer in contact with the p-type GaN-based layer;

forming a second portion of the passivation layer in contact with the GaN-based active layer;

forming a third portion of the passivation layer in contact with the n-type GaN-based layer; and

forming a fourth portion contacting the n-type electrode.

11. The method according to claim 10, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the first portion of the passivation layer.

12. The method according to claim 11, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the second portion of the passivation layer.

13. The method according to claim 12, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the fourth portion of the passivation layer.

14. The method according to claim 13, wherein the forming the passivation layer comprises:

forming the fourth portion of the passivation layer larger than the first portion of the passivation layer.

15. The method according to claim 14, wherein the forming the passivation layer comprises:

forming the fourth portion of the passivation layer larger than the second portion of the passivation layer.

16. The method according to claim 15, wherein the forming the metal substrate comprises:

forming a thickness of the metal substrate to be at least 10 times thicker than a total thickness of the n-type GaN-based layer, the GaN-based active layer, and the p-type GaN-based layer.

17. A method of manufacturing a light emitting device, the method comprising:

forming an n-type GaN-based layer on a sapphire substrate;

forming a GaN-based active layer on the n-type GaN-based layer;

forming a p-type GaN-based layer on the GaN-based active layer;

forming a p-type electrode on the p-type GaN-based layer;

forming a metal substrate on the p-type electrode;

removing the sapphire substrate;

forming an n-type electrode on the n-type GaN-based layer; and

forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, and an upper surface of the n-type GaN-based layer, after the forming the n-type electrode.

18. The method according to claim 17, wherein the forming the passivation layer comprises:

forming a first portion of the passivation layer in contact with the p-type GaN-based layer;

forming a second portion of the passivation layer in contact with the GaN-based active layer; and

forming a third portion of the passivation layer in contact with the n-type GaN-based layer.

19. The method according to claim 18, wherein the forming the passivation layer comprises:

forming the third portion of the passivation layer larger than the first portion of the passivation layer and the second portion of the passivation layer.

20. The method according to claim 19, wherein the forming the metal substrate comprises:

forming a thickness of the metal substrate to be at least 10 times thicker than a total thickness of the n-type GaN-based layer, the GaN-based active layer, and the p-type GaN-based layer.