Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
First Claim
1. A method of forming a semiconductor structure, the method comprising:
- providing a substrate comprising a first material portion and a layer of single crystal silicon on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface;
depositing a buffer layer in one or more of the plurality of grooves;
epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase layer;
bonding a handle substrate to the epitaxially grown semiconductor material; and
removing the substrate including the layer of single crystal silicon from the epitaxially grown semiconductor material, and further removing the hexagonal crystalline phase layer.
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Accused Products
Abstract
A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
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Citations
20 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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providing a substrate comprising a first material portion and a layer of single crystal silicon on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface; depositing a buffer layer in one or more of the plurality of grooves; epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase layer; bonding a handle substrate to the epitaxially grown semiconductor material; and removing the substrate including the layer of single crystal silicon from the epitaxially grown semiconductor material, and further removing the hexagonal crystalline phase layer. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 14)
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5. A method of forming a semiconductor structure, the method comprising:
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providing a first substrate comprising a first material portion and a layer of single crystal silicon on the first material portion, the first substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface, wherein one or more of the plurality of grooves are truncated v-grooves, each truncated v-groove comprising a first diagonal sidewall, a second diagonal sidewall opposing the first diagonal sidewall, and a bottom portion that is parallel with the major front surface of the first substrate, and further wherein the first substrate is a silicon-on-insulator substrate comprising the layer of single crystal silicon over a buried insulator layer, the bottom portion of the truncated v-groove exposing a surface of the buried insulator layer; depositing a buffer layer in one or more of the plurality of grooves; epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase layer; bonding a handle substrate to the epitaxially grown semiconductor material; and removing the first substrate including the layer of single crystal silicon from the epitaxially grown semiconductor material.
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13. A method of forming a semiconductor device, the method comprising:
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providing a substrate comprising a first material portion and a layer of single crystal silicon on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface; depositing a buffer layer in one or more of the plurality of grooves; epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase layer; bonding a handle substrate to the epitaxially grown semiconductor material; and removing the substrate including the layer of single crystal silicon from the epitaxially grown semiconductor material to expose the semiconductor material and buffer layer grown in the grooves, wherein the hexagonal crystalline phase layer and cubic crystalline phase structure together have a length dimension, a width dimension and a height dimension, the width dimension decreasing with the height to form a tapered structure; and employing the tapered structure to form a semiconductor device, wherein at least a portion of the hexagonal crystalline phase layer remains as part of the semiconductor device. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification