Vertical topology light emitting device

• US 10,453,998 B2
• Filed: 10/16/2018
• Issued: 10/22/2019
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): Smith, Bradley
• Application Number:
  US16/162,030
• Publication Number:
  US 20190051796A1
• Time in Patent Office: 371 Days
• Field of Search: None
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.

Claims

1. A light emitting device, comprising:

a metal support structure comprising Cu;

an adhesion structure on the metal support structure;

a reflective conductive contact on the adhesion structure;

a GaN-based semiconductor structure on the reflective conductive contact,

wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,

wherein the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and

wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers;

an interface layer on the GaN-based semiconductor structure; and

a contact pad on the interface layer,

wherein a second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.

2. The device according to claim 1, wherein the adhesion structure comprises:

a first adhesion layer; and

a second adhesion layer on the first adhesion layer.

3. The device according to claim 1, wherein the first-type semiconductor layer is a p-type semiconductor layer and the second-type semiconductor layer is an n-type semiconductor layer.

4. The device according to claim 1, wherein the reflective conductive contact comprises Ti.

5. The device according to claim 3, wherein the first thickness of the GaN-based semiconductor structure is less than 1/20 thick of the second thickness of the metal support structure.

6. The device according to claim 1, wherein the interface layer comprises a first interface layer and a second interface layer.

7. The device according to claim 1, wherein the contact pad comprises Au.

8. The device according to claim 1, wherein the contact pad has a diameter of 100 microns.

9. A light emitting device, comprising:

a metal support structure;

an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;

a first metal layer on the adhesion structure;

a second metal layer on the first metal layer, the second metal layer comprising Ti; and

a GaN-based semiconductor structure on the second metal layer,

wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,

wherein the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface,

wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure,

wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and

wherein the first thickness of the GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the metal support structure;

an inter layer on the GaN-based semiconductor structure, the inter layer comprising Al; and

a contact pad on the inter layer,

wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and

wherein the second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.

10. The device according to claim 9, wherein the metal support structure comprises Cu.

11. The device according to claim 9, wherein the first metal layer is thicker than the second metal layer.

12. The device according to claim 9, wherein the inter layer comprises a first inter layer and a second inter layer.

13. A light emitting device, comprising:

a support structure;

an adhesion structure on the support structure;

a first metal layer on the adhesion structure;

a second metal layer on the first metal layer, the second metal layer comprising Ti;

a GaN-based semiconductor structure on the second metal layer,

wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer,

wherein the GaN-based semiconductor structure includes a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface,

wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure,

wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and

wherein the first thickness of GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the support structure;

an inter layer on the GaN-based semiconductor structure; and

a contact pad on the inter layer,

wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and

wherein the second thickness of the support structure is 0.5 times less than a width of top surface of the GaN-based semiconductor structure.

14. The device according to claim 13, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.

15. The device according to claim 13, wherein the first metal layer is thicker than the second metal layer.

16. The device according to claim 13, wherein the inter layer comprises Cr.

17. The device according to claim 13, wherein the inter layer comprises a first inter layer and a second inter layer.

18. The device according to claim 13, wherein the support structure comprises Cu.

19. The device according to claim 13, wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure.

20. The device according to claim 13, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer.