Heterostructure including anodic aluminum oxide layer

• US 10,454,006 B2
• Filed: 08/19/2016
• Issued: 10/22/2019
• Est. Priority Date: 10/02/2013
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Shur, Michael, Shatalov, Maxim S., Dobrinsky, Alexander
• Primary Examiner(s): Chen, Yu
• Application Number:
  US15/241,425
• Publication Number:
  US 20170186905A1
• Time in Patent Office: 1,159 Days
• CPC Class Codes: C25D 11/045 for forming AAO templates
• CPC Class Codes: C25D 11/16 Pretreatment , e.g. desmutting
• CPC Class Codes: C25D 11/24 Chemical after-treatment
• CPC Class Codes: C30B 25/04 Pattern deposit, e.g. by using masks
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02258 formation by anodic treatment, e.g. anodic oxidation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements

Abstract

A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

Claims

1. A semiconductor heterostructure comprising:

an active region configured to emit radiation;

a first semiconductor layer located on a first side of the active region;

an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending only to an adjacent surface of the first semiconductor layer, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer;

a layer of a first material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of first material covers the plurality of pores, penetrates a first subset of the plurality of pores, and directly contacts the adjacent surface of the first semiconductor layer; and

a second material penetrating a second subset of the plurality of pores distinct from the first subset, wherein the second material is distinct from the first material.

2. The heterostructure of claim 1, wherein the first semiconductor layer comprises a contact layer and wherein at least one of the first or second materials is a conductive material forming an ohmic contact with the first semiconductor layer.

3. The heterostructure of claim 2, wherein the conductive material is a transparent conductive oxide.

4. The heterostructure of claim 2, wherein a characteristic distance between the plurality of pores is less than a current spreading length.

5. The heterostructure of claim 1, wherein at least one of the first or second materials is a reflective material.

6. The heterostructure of claim 1, wherein the first material is a metallic material and the second material is an ultraviolet transparent material.

7. The heterostructure of claim 6, wherein the first subset of the plurality of pores is located on an outer edge of the anodic aluminum oxide layer and the second subset of the plurality of pores is located on an inner portion of the anodic aluminum oxide layer.

8. The heterostructure of claim 1, wherein at least a portion of the second subset of the plurality of pores are only partially filled with the second material.

9. The heterostructure of claim 1, wherein at least one of:

a density or a size of the plurality of pores varies laterally.

10. The heterostructure of claim 1, further comprising an optical element attached to the anodic aluminum oxide layer.

11. An optoelectronic device comprising:

a heterostructure including;

an active region configured to emit radiation during operation of the device;

an anodic aluminum oxide layer located on a first side of the active region immediately adjacent to a first semiconductor layer in the heterostructure, wherein the anodic aluminum oxide layer includes a plurality of pores extending entirely through the anodic aluminum oxide layer only to an adjacent surface of the first semiconductor layer in the heterostructure, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer; and

a first filler material penetrating only a first subset of the plurality of-pores of the anodic aluminum oxide layer and directly contacting the adjacent surface of the first semiconductor layer, wherein a second subset of the plurality of pores distinct from the first subset are not penetrated by the first filler material.

12. The optoelectronic device of claim 11, further comprising a second filler material penetrating the second subset of the plurality of pores, wherein the second filler material is distinct from the first filler material.

13. The optoelectronic device of claim 11, wherein the anodic aluminum oxide layer is located on an external surface of the heterostructure.

14. The optoelectronic device of claim 13, further comprising a device component attached to an external surface of the anodic aluminum oxide layer using the first filler material.

15. The optoelectronic device of claim 14, wherein the device component is a lens.

16. The optoelectronic device of claim 13, wherein the first semiconductor layer in the heterostructure is one of:

a substrate, an n-type contact layer, or a p-type contact layer.

17. A method of fabricating an optoelectronic device, the method comprising:

forming a heterostructure for the optoelectronic device, wherein the forming includes;

forming an active region configured to emit radiation during operation of the device;

forming an anodic aluminum oxide layer located on a first side of the active region immediately adjacent to a first semiconductor layer in the heterostructure, wherein the anodic aluminum oxide layer includes a plurality of pores extending entirely through the anodic aluminum oxide layer only to an adjacent surface of the first semiconductor layer in the heterostructure, wherein an entire bottom portion of each of the plurality of pores interfaces with the adjacent surface of the first semiconductor layer; and

causing a first filler material to penetrate only a first subset of the plurality of pores of the anodic aluminum oxide layer and directly contact the adjacent surface of the first semiconductor layer, wherein a second subset of the plurality of pores distinct from the first subset are not penetrated by the first filler material.

18. The method of claim 17, the method further comprising attaching a device component to an external surface of the anodic aluminum oxide layer using the first filler material.

19. The method of claim 18, wherein the device component is one of:

a lens or a contact.

20. The method of claim 17, further comprising selecting a morphology for the plurality of pores based on at least one of:

a desired conductivity, a desired reflectivity, or a desired transparency.