Semiconductor pressure sensor
First Claim
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1. A semiconductor pressure sensor comprising:
- a first semiconductor substrate having a surface;
an oxide film provided on the surface of the first semiconductor substrate and having a cavity;
a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and
a piezoelectric device provided on the diaphragm,wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, anda stress mitigating groove is provided in the oxide film outside and around the diaphragm.
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Abstract
A semiconductor pressure sensor includes: a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm.
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Citations
3 Claims
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1. A semiconductor pressure sensor comprising:
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a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm. - View Dependent Claims (2, 3)
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Specification