Optoelectronic component and method for producing an optoelectronic component

• US 10,454,057 B2
• Filed: 02/22/2016
• Issued: 10/22/2019
• Est. Priority Date: 02/23/2015
• Status: Active Grant

• Current Assignee: Pictiva Displays International Limited (f/k/a Dolya Holdco 5 Limited) (Key Patent Innovations Limited)
• Original Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Inventors: Popp, Michael, Schwamb, Philipp, Baisl, Richard, Rosenberger, Johannes
• Primary Examiner(s): Tran, Tony
• Application Number:
  US15/552,812
• Publication Number:
  US 20180047932A1
• Time in Patent Office: 1,338 Days
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 30/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An optoelectronic component is provided with a carrier; a zinc oxide layer arranged on the carrier and having the first and second regions, wherein the first region is a first electrode structure which is doped with aluminum so that the first region is transparent and electrically conductive; an organic optically functional layer structure arranged at least partially over the first electrode structure; and a second electrode structure arranged at least partially over the organic optically functional layer structure. The first and second electrode structures electrically contact the organic optically functional layer structure. The zinc oxide layer has a lower doping in the second region than the first electrode structure. The zinc oxide layer is configured in the second region as a varistor layer structure, which is arranged between the first and second electrode structures and contacts the two electrode structures. The varistor layer structure adjoins the optically transparent first region.

Claims

1. An optoelectronic component, comprising:

a carrier;

a zinc oxide layer, which is arranged on the carrier and has a first region and a second region,

wherein the first region is a first electrode structure which is doped with aluminum in such a way that the first region is transparent and electrically conductive, and

wherein the zinc oxide layer has a lower doping of aluminum in the second region than in the first electrode structure;

an organic optically functional layer structure, which is arranged at least partially over the first electrode structure;

a second electrode structure, which is arranged at least partially over the organic optically functional layer structure, the first electrode structure and the second electrode structure electrically contacting the organic optically functional layer structure; and

wherein the zinc oxide layer is configured in the second region as a varistor layer structure, which is arranged between the first electrode structure and the second electrode structure and physically contacts the two electrode structures, and

wherein the varistor layer structure laterally physically contacts and adjoins the optically transparent first region;

further comprising;

a heat conduction layer which is in direct contact with the varistor layer structure; and

wherein the zinc oxide is polycrystalline.

2. The optoelectronic component as claimed in claim 1,

wherein the varistor layer structure is configured as an encapsulation layer, which is arranged at least partially over the second electrode structure and/or over the organic optically functional layer structure.

3. The optoelectronic component as claimed in claim 1,

wherein the varistor layer structure is arranged at least partially between the second electrode structure and the carrier, or between the organic optically functional layer structure and the carrier.

4. The optoelectronic component as claimed in claim 1,

wherein the varistor layer structure is essentially free from aluminum doping.