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Semiconductor device and method of manufacturing same

  • US 10,454,059 B2
  • Filed: 11/28/2017
  • Issued: 10/22/2019
  • Est. Priority Date: 04/24/2002
  • Status: Active Grant
First Claim
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1. a display device comprising:

  • a pixel portion comprising;

    a single crystal semiconductor substrate;

    a transistor comprising a source region and a drain region, each of the source region and the drain region in the single crystal semiconductor substrate;

    an interlayer insulating film over the transistor;

    a first conductive layer over the interlayer insulating film and in contact with one of the source region and the drain region of the transistor, the first conductive layer comprising titanium;

    a second conductive layer over and in contact with the first conductive layer, a material of the second conductive layer being a first compound;

    a third conductive layer over and electrically connected to the second conductive layer, a material of the third conductive layer comprising one of aluminum and silver;

    a fourth conductive layer over and in contact with the third conductive layer, a material of the fourth conductive layer being a second compound;

    an insulation over the interlayer insulating film and the first conductive layer, the insulation comprising an opening having an inclined surface;

    an organic chemical compound layer over the insulation and the second conductive layer; and

    a fifth conductive layer over the organic chemical compound layer, the fifth conductive layer having a transparent property,wherein the first compound comprises a first metal element, andwherein the second compound comprises a second metal element.

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