RF branch with improved power handling
First Claim
1. A radio frequency (RF) switch, comprising:
- one or more stages, each stage comprising;
a signal input terminal;
a signal output terminal;
a control input terminal;
a switching device having a source terminal connected to the signal input terminal, a drain terminal connected to the signal output terminal, a gate terminal for controlling an on/off state of the switching device, and a body terminal;
a gate resistor connected in series between the control input terminal and the gate terminal, wherein the gate resistor of each stage forms part of a gate bias network; and
a rectification circuit for rectifying a voltage across the source and drain terminals to provide a local bias voltage to the body terminal, wherein the rectification circuit comprises;
a first capacitor connected between the source terminal and a first intermediate node;
a first diode having an anode connected to the first intermediate node and a cathode connected to the drain terminal;
a second capacitor connected between the drain terminal and a second intermediate node; and
a second diode having an anode connected to the second intermediate node and a cathode connected to the source terminal.
1 Assignment
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Accused Products
Abstract
Improved Radio Frequency (RF) switches are provided herein. According to one aspect, an RF switch comprises one or more stages. In one embodiment, each stage comprises a signal input terminal, a signal output terminal, a control input terminal, and a switching device having a source connected to the signal input terminal, a drain connected to the signal output terminal, a gate for controlling the on/off state of the switching device, and a body terminal. Each stage includes a gate resistor connected in series between the control input terminal and the gate and a rectification circuit for rectifying a voltage across the source and drain to provide a local bias voltage to the body terminal.
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Citations
22 Claims
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1. A radio frequency (RF) switch, comprising:
one or more stages, each stage comprising; a signal input terminal; a signal output terminal; a control input terminal; a switching device having a source terminal connected to the signal input terminal, a drain terminal connected to the signal output terminal, a gate terminal for controlling an on/off state of the switching device, and a body terminal; a gate resistor connected in series between the control input terminal and the gate terminal, wherein the gate resistor of each stage forms part of a gate bias network; and a rectification circuit for rectifying a voltage across the source and drain terminals to provide a local bias voltage to the body terminal, wherein the rectification circuit comprises; a first capacitor connected between the source terminal and a first intermediate node; a first diode having an anode connected to the first intermediate node and a cathode connected to the drain terminal; a second capacitor connected between the drain terminal and a second intermediate node; and a second diode having an anode connected to the second intermediate node and a cathode connected to the source terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A radio frequency (RF) switch, comprising:
one or more stages, each stage comprising; a signal input terminal; a signal output terminal; a control input terminal; a switching device having a source terminal connected to the signal input terminal, a drain terminal connected to the signal output terminal, a gate terminal for controlling an on/off state of the switching device, and a body terminal; a gate resistor connected in series between the control input terminal and the gate terminal, wherein the gate resistor of each stage forms part of a gate bias network; and a rectification circuit for rectifying a voltage across the source and drain terminals to provide a local bias voltage to the body terminal, wherein the rectification circuit comprises; a first capacitor connected between the source terminal and a first intermediate node; a first diode-connected field-effect transistor (DFET) having a gate terminal and a drain terminal connected to the first intermediate node and a source terminal connected to the drain terminal of the switching device; a second capacitor connected between the drain terminal and a second intermediate node; and a second DFET having a gate terminal and a drain terminal connected to the second intermediate node and a source terminal connected to the source terminal of the switching device. - View Dependent Claims (20)
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21. A radio frequency (RF) switch, comprising:
one or more stages, each stage comprising; a signal input terminal; a signal output terminal; a control input terminal; a switching device having a source terminal connected to the signal input terminal, a drain terminal connected to the signal output terminal, a gate terminal for controlling an on/off state of the switching device, and a body terminal; a gate resistor connected in series between the control input terminal and the gate terminal, wherein the gate resistor of each stage forms part of a gate bias network; and a rectification circuit for rectifying a voltage across the source and drain terminals to provide a local bias voltage to the body terminal, wherein the rectification circuit comprises; a first varactor connected between the source terminal and a first intermediate node; a first diode-connected field-effect transistor (DFET) having a gate terminal and a drain terminal connected to the first intermediate node and a source terminal connected to the drain terminal of the switching device; a second varactor connected between the drain terminal and a second intermediate node; a second DFET having a gate terminal and a drain terminal connected to the second intermediate node and a source terminal connected to the source terminal of the switching device; and a first capacitor connected between the first intermediate node and the second intermediate node. - View Dependent Claims (22)
Specification