Method for copper filling of a hole in a component carrier
First Claim
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1. A method of filling a hole formed in a component carrier with copper, the method comprising:
- forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole; and
subsequently, covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath,wherein the bath comprises a concentration of a copper ion in a range between 50 g/L and 75 g/L, andwherein at least partially covering the layer and at least partially filling the hole are done by flash-plating.
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Abstract
A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.
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15 Claims
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1. A method of filling a hole formed in a component carrier with copper, the method comprising:
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forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole; and subsequently, covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath, wherein the bath comprises a concentration of a copper ion in a range between 50 g/L and 75 g/L, and wherein at least partially covering the layer and at least partially filling the hole are done by flash-plating. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification