Laser welded glass packages

• US 10,457,595 B2
• Filed: 10/29/2015
• Issued: 10/29/2019
• Est. Priority Date: 10/31/2014
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Boek, Heather Debra, Dabich, II, Leonard Charles, Deneka, David Alan, Kim, Jin Su, Koval, Shari Elizabeth, Logunov, Stephan Lvovich, Quesada, Mark Alejandro, Streltsov, Alexander Mikhailovich
• Primary Examiner(s): Pleszczynska, Joanna
• Application Number:
  US15/522,198
• Publication Number:
  US 20170327419A1
• Time in Patent Office: 1,461 Days
• CPC Class Codes: C01G 19/02 Oxides
• CPC Class Codes: C03C 15/00 Surface treatment of glass, not in the form of fibres or filaments, by etching etching or surface-brightening compositions, in general C09K13/00
• CPC Class Codes: C03C 17/02 with glass C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/06 with metals C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/23 Oxides C03C17/02 takes precedence
• CPC Class Codes: C03C 23/0025 by a laser beam
• CPC Class Codes: C03C 27/044 of glass, glass-ceramic or ceramic material only
• CPC Class Codes: C03C 27/06 Joining glass to glass by processes other than fusing fusing C03B23/20; units for use as elements for closing wall or like openings and comprising two or more parallel glass panes in spaced relationship, the panes being permanently secured together E06B3/66
• CPC Class Codes: C03C 27/10 with the aid of adhesive specially adapted for that purpose
• CPC Class Codes: C03C 3/14 containing boron
• CPC Class Codes: C03C 3/16 containing phosphorus
• CPC Class Codes: C03C 3/23 containing halogen and at least one oxide, e.g. oxide of boron
• CPC Class Codes: C03C 3/247 containing fluorine and phosphorus
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants

Abstract

A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((σ_{tensile stress location})/(σ_{interface laser weld}))<<1 or <1 and σ_{interface laser weld}>10 MPa or >1 MPa where σ_{tensile stress location} is the stress present in the first substrate and σ_{interface laser weld} is the stress present at the interface. This method may be used to manufacture a variety of different sealed packages.

Claims

1. An apparatus comprising:

a first substrate having a first surface;

an inorganic film formed over the first surface of the first substrate;

a second substrate adjacent the first substrate, wherein the inorganic film is between the first substrate and the second substrate; and

a weld formed by the inorganic film at an interface between the first substrate and the adjacent second substrate bonding the first substrate and the second substrate,

wherein the weld is characterized by

3. The apparatus of claim 2 or 1 further comprising:

a device protected between the first substrate and the second substrate wherein the inorganic film is in contact with the second substrate.

4. The apparatus of claim 3, wherein absorption by the inorganic film is more than 10% at a predetermined laser wavelength.

5. The apparatus of claim 3, wherein the composition of the inorganic film is selected from the group consisting of SnO₂, ZnO, TiO₂, ITO, Zn, Ti, Ce, Pb, Fe, Va, Cr, Mn, Mg, Ge, SnF₂, ZnF₂ and combinations thereof.

6. The apparatus of claim 3, wherein the composition of the inorganic film is selected to lower the activation energy for inducing creep flow of the first substrate, the second substrate, or both the first and second substrates.

7. The apparatus of claim 3, wherein the composition of the inorganic film is laser absorbing low liquidus temperature material with a liquidus temperature less than or equal to about 1000°

C.

8. The apparatus of claim 3, wherein the composition of the inorganic film comprises:

20-100 mol % SnO;

0-50 mol % SnF₂; and

0-30 mol % P₂O₅ or B₂O₃.

9. The apparatus of claim 3, wherein the inorganic film and the first and second substrates have a combined internal transmission of more than 80% at approximately 420 nm to approximately 750 nm.

2. An apparatus comprising:

a first substrate having a first surface;

an inorganic film formed over the first surface of the first substrate;

a second substrate adjacent the first substrate, wherein the inorganic film is between the first substrate and the second substrate; and

a weld formed by the inorganic film at an interface between the first substrate and the adjacent second substrate bonding the first substrate and the second substrate,

wherein the weld is characterized by