Conductivity based on selective etch for GaN devices and applications thereof
First Claim
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1. An integrated optoelectronic device comprising:
- a first layer comprising gallium nitride located on a substrate;
a second layer comprising porous gallium nitride having an n-type conductivity located on a side of the first layer opposite the substrate and forming one layer of a distributed Bragg reflector; and
an active region formed on a side of the second layer opposite the substrate.
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Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
94 Citations
24 Claims
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1. An integrated optoelectronic device comprising:
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a first layer comprising gallium nitride located on a substrate; a second layer comprising porous gallium nitride having an n-type conductivity located on a side of the first layer opposite the substrate and forming one layer of a distributed Bragg reflector; and an active region formed on a side of the second layer opposite the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for making an integrated optoelectronic device, the method comprising:
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forming a first layer comprising gallium nitride on a substrate; forming a second layer comprising gallium nitride having an n-type conductivity on a side of the first layer opposite the substrate; forming an active region on a side of the second layer opposite the first layer; and electrochemically etching the second layer to form a first porous layer that is one layer of a distributed Bragg reflector. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of lateral etching to form porous gallium nitride layers for optoelectronic devices, the method comprising:
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forming a first layer comprising gallium nitride on a substrate; forming a second layer comprising gallium nitride having an n-type conductivity on a side of the first layer opposite the substrate; forming a third layer comprising gallium nitride having a first conductivity on a side of the second layer opposite the first layer; exposing a side wall of the second layer; and electrochemically and laterally etching the second layer between the first and third layers to form a first porous gallium nitride layer. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification