Optical coupling scheme

• US 10,459,166 B2
• Filed: 04/04/2018
• Issued: 10/29/2019
• Est. Priority Date: 10/09/2015
• Status: Active Grant

• Current Assignee: Huawei Technologies Research & Development Belgium NV (Huawei Investment & Holding Co., Ltd.)
• Original Assignee: Caliopa N.V. (Huawei Investment & Holding Co., Ltd.)
• Inventors: Collins, Tom
• Primary Examiner(s): Petkovsek, Daniel
• Application Number:
  US15/945,064
• Publication Number:
  US 20180231714A1
• Time in Patent Office: 573 Days
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1223 high refractive index type, i.e. high-contrast waveguides
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/26 Optical coupling means G02B6/36, G02B6/42 take precedence

Abstract

A waveguide structure for optical coupling is provided. The waveguide structure includes a first waveguide embedded in a cladding of a lower refractive index than the first waveguide, a second waveguide of a higher refractive index than the cladding, and an intermediate waveguide. The first waveguide and the second waveguide are physically arranged at the same side of the intermediate waveguide to establish an optical coupling between the first waveguide and the second waveguide through the intermediate waveguide. The first waveguide material has a refractive index value smaller than or equal to 3.

Claims

1. A waveguide structure for optical coupling between passive and active devices, the waveguide structure comprising:

a SiN waveguide embedded in a cladding of a lower refractive index than the SiN waveguide, wherein the SiN waveguide operates in relevant wavelength ranges of (a) a 0-band with a range from 1260 nm to 1360 nm, (b) a C-band with a range from 1520 nm to 1570 nm, and/or (c) a L-band with a range from 1570 nm to 1610 nm;

a III-V waveguide of a higher refractive index than the cladding and is fabricated with an active device prior to transferring the III-V waveguide to a photonic integrated circuit;

an intermediate waveguide arranged with respect to the SiN waveguide and the waveguide to be at a same side of the intermediate waveguide; and

an optical coupling between the SiN waveguide and the waveguide through the intermediate waveguide.

2. The waveguide structure according to claim 1, wherein

the SiN waveguide and the waveguide each comprise a tapered end;

the intermediate waveguide comprises two tapered ends;

the tapered end of the SiN waveguide is arranged to face a first tapered end of the intermediate waveguide for establishing the optical coupling between the SiN waveguide and the intermediate waveguide, wherein the SiN waveguide and the intermediate waveguide extend at least substantially parallel to each other in one direction and the tapered end of the SiN waveguide overlaps with the first tapered end of the intermediate waveguide in the extension direction; and

a second tapered end of the intermediate waveguide is arranged to face the tapered end of the III-V waveguide for establishing an optical coupling between the intermediate waveguide and the III-V waveguide, wherein the III-V waveguide and the intermediate waveguide extend at least substantially parallel to each other in one direction, and the tapered end of the III-V waveguide overlaps with the second tapered end of the intermediate waveguide in the extension direction,

wherein the extension direction refers to the tapered ends of the waveguides through each of which an optical coupling between waveguides is established, will extend in the same direction so as to run essentially parallel or extend along the same direction.

3. The waveguide structure according to claim 2, wherein the SiN waveguide has a thickness in the range of 70 nm to 700 nm, the tapered end of the SiN waveguide at its thinnest part having a width in the range of 100 nm to 2 μ

m.

4. The waveguide structure according to claim 2, wherein the intermediate waveguide has a thickness in the range of 200 nm to 500 nm, the first tapered end of the intermediate waveguide having a width less than 150 nm, and the second tapered end of the intermediate waveguide having a width in the range of 100 nm to 300 nm.

5. The waveguide structure according to claim 2, wherein the III-V waveguide has a thickness in the range of 200 nm to 2 μ

m, the tapered end of the III-V waveguide at its thinnest part having a width in the range of 150 nm to 500 nm.

6. The waveguide structure according to claim 1, wherein the intermediate waveguide is formed using a mono-crystalline layer of a silicon-on-insulator wafer substrate, wherein the SiN waveguide and the III-V waveguide are arranged on a side of the intermediate waveguide that is opposite to the side facing the silicon-on-insulator wafer substrate.

7. The waveguide structure according to claim 1, wherein the SiN waveguide has a refractive index of 1.7 or higher.

8. The waveguide structure according to claim 1, wherein the SiN waveguide has a refractive index in the range of 1.7 to 2.5.

9. A method for fabricating a waveguide structure for optical coupling, the method comprising:

forming a silicon-on-insulator wafer substrate;

forming an intermediate waveguide within a thin silicon layer of the silicon-on-insulator wafer substrate;

covering the intermediate waveguide with a cladding and planarizing the cladding;

forming a SiN waveguide on top of the planarized cladding, wherein the cladding comprises a lower refractive index than the SiN waveguide and the SiN waveguide has a relevant operating wavelength ranges of (i) a 0-band with a range from 1260 nm to 1360 nm, (ii) a C-band with a range from 1520 nm to 1570 nm, and/or (iii) a L-band with a range from 1570 nm to 1610 nm;

annealing the formed SiN waveguide before and/or after patterning of the SiN waveguide;

applying an overcladding material for embedding the SiN waveguide;

locally removing the overcladding material to a thickness less than 200 nm above the intermediate waveguide; and

forming a III-V waveguide in an area where the overcladding material is removed, wherein the III-V waveguide comprises a higher refractive index than the overcladding and is fabricated with an active device prior to transferring the III-V waveguide to a photonic integrated circuit.

10. The method according to claim 9, wherein locally removing the overcladding material comprises locally using the SiN waveguide as an etch stop layer before the overcladding material is locally removed.

11. The method according to claim 9, wherein the SiN waveguide layer is a Low Pressure Chemical Vapor Deposition (LPCVD) silicon nitride layer.

12. The method according to claim 9, wherein the III-V waveguide is formed using transfer printing.

13. The method according to claim 9, wherein the III-V waveguide is formed by bonding epitaxial layers of III-V material.

14. The method according to claim 9, wherein a further planarizing step to the wafer is applied after the III-V waveguide has been formed and contacts to any active device formed in the III-V waveguide layer are then added.