Display device
First Claim
1. A semiconductor device comprising:
- a substrate,a first TFT comprising silicon (Si) and a second TFT comprising oxide semiconductor are formed over the substrate,an insulator formed over the first TFT and the second TFT,a first source electrode and a first drain electrode of the first TFT connect with the silicon (Si) via a first through hole and a second through hole formed in the insulator,a second source electrode and a second drain electrode of the second TFT connect with the oxide semiconductor via a third through hole and a fourth through hole formed in the insulator,a first metal film and a second metal film directly contact the oxide semiconductor in a sectional view, and the first metal film and the second metal film sandwich a channel of the oxide semiconductor in a plan view,an aluminum oxide layer contacts the first metal film and the second metal film and the oxide semiconductor,the second source electrode and the second drain electrode contact the first metal film and the second metal film via the third through hole and the fourth through hole formed in the aluminum oxide layer.
0 Assignments
0 Petitions
Accused Products
Abstract
A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.
-
Citations
11 Claims
-
1. A semiconductor device comprising:
-
a substrate, a first TFT comprising silicon (Si) and a second TFT comprising oxide semiconductor are formed over the substrate, an insulator formed over the first TFT and the second TFT, a first source electrode and a first drain electrode of the first TFT connect with the silicon (Si) via a first through hole and a second through hole formed in the insulator, a second source electrode and a second drain electrode of the second TFT connect with the oxide semiconductor via a third through hole and a fourth through hole formed in the insulator, a first metal film and a second metal film directly contact the oxide semiconductor in a sectional view, and the first metal film and the second metal film sandwich a channel of the oxide semiconductor in a plan view, an aluminum oxide layer contacts the first metal film and the second metal film and the oxide semiconductor, the second source electrode and the second drain electrode contact the first metal film and the second metal film via the third through hole and the fourth through hole formed in the aluminum oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
Specification