Mask structure and COA type array substrate
First Claim
1. A mask structure of a mask for manufacturing a color filter layer through hole, comprising a central light shielding portion, a peripheral light shielding portion surrounding the central light shielding portion and conforming to an outer contour shape of the central light shielding portion and a single circumambient hollow slit sandwiched between the peripheral light shielding portion and the central light shielding portion, wherein a width of the circumambient hollow slit is less than or equal to 2.0 μ
- m to diffract exposure light through the circumambient hollow slit to result in propagation of reverse bending and energy intensity gradient to gentle a taper of the color filter layer through hole;
wherein the single circumambient hollow slit circumferentially surrounds the central light shielding portion such that the exposure light passing through the single circumambient hollow slit causes exposure at a first location corresponding to the single circumambient hollow slit and also causes exposure at a second location corresponding to the central light shielding portion, exposure of the first and second portions allowing the color filter layer through hole to be formed through exposure to light passing through only the single circumambient hollow slit.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a mask structure and a COA type array substrate. The mask structure comprises a central light shielding portion (1), a peripheral light shielding portion (3) surrounding the central light shielding portion (1) and conforming to an outer contour shape of the central light shielding portion (1) and a circumambient hollow slit (5) sandwiched between the peripheral light shielding portion (3) and the central light shielding portion (1). The exposure light will diffract through the hollow slit (5) to result in the propagation of the reverse bending and the energy intensity gradient. In conjunction with the negative photoresist, the taper of the finally manufactured color filter layer through hole can be made to be gentle to improve the electrical connection quality between the pixel electrodes and the metal material signal lines for avoiding the display failure.
9 Citations
14 Claims
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1. A mask structure of a mask for manufacturing a color filter layer through hole, comprising a central light shielding portion, a peripheral light shielding portion surrounding the central light shielding portion and conforming to an outer contour shape of the central light shielding portion and a single circumambient hollow slit sandwiched between the peripheral light shielding portion and the central light shielding portion, wherein a width of the circumambient hollow slit is less than or equal to 2.0 μ
- m to diffract exposure light through the circumambient hollow slit to result in propagation of reverse bending and energy intensity gradient to gentle a taper of the color filter layer through hole;
wherein the single circumambient hollow slit circumferentially surrounds the central light shielding portion such that the exposure light passing through the single circumambient hollow slit causes exposure at a first location corresponding to the single circumambient hollow slit and also causes exposure at a second location corresponding to the central light shielding portion, exposure of the first and second portions allowing the color filter layer through hole to be formed through exposure to light passing through only the single circumambient hollow slit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- m to diffract exposure light through the circumambient hollow slit to result in propagation of reverse bending and energy intensity gradient to gentle a taper of the color filter layer through hole;
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9. A mask structure of a mask for manufacturing a color filter layer through hole, comprising a central light shielding portion, a peripheral light shielding portion surrounding the central light shielding portion and conforming to an outer contour shape of the central light shielding portion and a circumambient hollow slit sandwiched between the peripheral light shielding portion and the central light shielding portion;
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wherein a width of the circumambient hollow slit is less than or equal to 2.0 μ
m to diffract exposure light through the circumambient hollow slit to result in propagation of reverse bending and energy intensity gradient to gentle a taper of the color filter layer through hole;wherein the single circumambient hollow slit circumferentially surrounds the central light shielding portion such that the exposure light passing through the single circumambient hollow slit causes exposure at a first location corresponding to the single circumambient hollow slit and also causes exposure at a second location corresponding to the central light shielding portion, exposure of the first and second portions allowing the color filter layer through hole to be formed through exposure to light passing through only the single circumambient hollow slit; and wherein a material of the central light shielding portion and the peripheral light shielding portion is chromium. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification