Memory management method, memory storage device and memory controlling circuit unit
First Claim
1. A memory management method for controlling a rewritable non-volatile memory module comprising a plurality of physical units, the memory management method comprising:
- defining a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, wherein a first data density of the first type physical unit is lower than a second data density of the second type physical unit;
determining whether a value of a valid count of a first physical unit of the physical units exceeds a threshold value, wherein the valid count relates to a number of logical unit to which the data stored in the first physical unit belongs and the value of the valid count is positively correlated with a data density of the first physical unit;
if the value of the valid count of the first physical unit exceeds the threshold value, managing the first physical unit based on the second data management rule, such that the data stored in the first physical unit conforms to a second reliability level and is protected based on a second protection level; and
if the value of the valid count of the first physical unit does not exceed the threshold value, managing the first physical unit based on the first data management rule, such that data stored in the first physical unit conforms to a first reliability level and is protected based on a first protection level,wherein the second reliability level is higher than the first reliability level, and the second protection level is higher than the first protection level,wherein a first number of logical units corresponding to the data stored in the first type physical unit is less than a second number of logical units corresponding to the data stored in the second type physical unit,wherein the first physical unit which is managed based on any one of the first data management rule and the second data management rule is accessible.
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Abstract
A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: defining a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, and a data density of the first type physical unit is lower than the data density of the second type physical unit; if a first physical unit belongs to the first type physical unit, managing the first physical unit according to the first data management rule to make the data stored in the first physical unit conforming to a first reliability level; and if the first physical unit belongs to the second type physical unit, managing the first physical unit according to the second data management rule to make the data stored in the first physical unit conforming to a second reliability level.
8 Citations
14 Claims
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1. A memory management method for controlling a rewritable non-volatile memory module comprising a plurality of physical units, the memory management method comprising:
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defining a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, wherein a first data density of the first type physical unit is lower than a second data density of the second type physical unit; determining whether a value of a valid count of a first physical unit of the physical units exceeds a threshold value, wherein the valid count relates to a number of logical unit to which the data stored in the first physical unit belongs and the value of the valid count is positively correlated with a data density of the first physical unit; if the value of the valid count of the first physical unit exceeds the threshold value, managing the first physical unit based on the second data management rule, such that the data stored in the first physical unit conforms to a second reliability level and is protected based on a second protection level; and if the value of the valid count of the first physical unit does not exceed the threshold value, managing the first physical unit based on the first data management rule, such that data stored in the first physical unit conforms to a first reliability level and is protected based on a first protection level, wherein the second reliability level is higher than the first reliability level, and the second protection level is higher than the first protection level, wherein a first number of logical units corresponding to the data stored in the first type physical unit is less than a second number of logical units corresponding to the data stored in the second type physical unit, wherein the first physical unit which is managed based on any one of the first data management rule and the second data management rule is accessible. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory storage device, comprising:
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a connecting interface unit, configured to be coupled to a host system; a rewritable non-volatile memory module, comprising a plurality of physical units; and a memory controlling circuit unit, coupled to the connecting interface unit and the rewritable non-volatile memory module, wherein the memory controlling circuit unit is configured to define a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, wherein a first data density of the first type physical unit is lower than a second data density of the second type physical unit, wherein the memory controlling circuit unit is further configured to determine whether a value of a valid count of a first physical unit of the physical units is greater than a threshold value, wherein the valid count relates to a number of logical unit to which the data stored in the first physical unit belongs and the value of the valid count is positively correlated with a data density of the first physical unit, wherein if the value of the valid count of the first physical unit exceeds the threshold value, the memory controlling circuit unit is further configured to manage the first physical unit based on the second data management rule, such that the data stored in the first physical unit conforms to a second reliability level and is protected based on a second protection level, wherein if the value of the valid count of the first physical unit does not exceed the threshold value, the memory controlling circuit unit is further configured to manage the first physical unit based on the first data management rule, such that data stored in the first physical unit conforms to a first reliability level and is protected based on a first protection level, wherein the second reliability level is higher than the first reliability level, and the second protection level is higher than the first protection level, wherein a first number of logical units corresponding to the data stored in the first type physical unit is less than a second number of logical units corresponding to the data stored in the second type physical unit, wherein the first physical unit which is managed based on any one of the first data management rule and the second data management rule is accessible. - View Dependent Claims (11, 12, 13)
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14. A memory controlling circuit unit for controlling a rewritable non-volatile memory module comprising a plurality of physical units, the memory controlling circuit unit comprises:
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a host interface, configured to couple to a host system; a memory interface, configured to couple to the rewritable non-volatile memory module; and a memory management circuit, coupled to the host interface and the memory interface, wherein the memory management circuit is configured to define a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, wherein a first data density of the first type physical unit is lower than a second data density of the second type physical unit, wherein the memory management circuit is further configured to determine whether a value of a valid count of a first physical unit of the physical units is greater than a threshold value, wherein the valid count relates to a number of logical unit to which the data stored in the first physical unit belongs and the value of the valid count is positively correlated with a data density of the first physical unit, wherein if the value of the valid count of the first physical unit exceeds the threshold value, the memory management circuit is further configured to manage the first physical unit based on the second data management rule, such that the data stored in the first physical unit conforms to a second reliability level and is protected based on a second protection level, wherein if the value of the valid count of the first physical unit does not exceed the threshold value, the memory management circuit is further configured to manage the first physical unit based on the first data management rule, such that data stored in the first physical unit conforms to a first reliability level and is protected based on a first protection level, wherein the second reliability level is higher than the first reliability level, and the second protection level is higher than the first protection level, wherein a first number of logical units corresponding to the data stored in the first type physical unit is less than a second number of logical units corresponding to the data stored in the second type physical unit, wherein the first physical unit which is managed based on any one of the first data management rule and the second data management rule is accessible.
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Specification