Patterning method
First Claim
1. A patterning method, comprising:
- forming a second mask layer on a first mask layer;
performing a patterning process to the first mask layer and the second mask layer, wherein the first mask layer is patterned to be a first mask pattern, and the second mask layer is patterned to be a second mask pattern formed on the first mask pattern;
performing a first trim process to the second mask pattern, wherein a width of the second mask pattern is smaller than a width of the first mask pattern after the first trim process;
forming a cover layer covering the first mask pattern and the second mask pattern after the first trim process;
performing an etching process to the first mask pattern after the step of forming the cover layer;
removing a part of the cover layer for exposing the second mask pattern before the etching process;
removing the second mask pattern before the etching process; and
performing a second trim process to the cover layer after the step of removing the second mask pattern and before the etching process.
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Accused Products
Abstract
A patterning method includes the following steps. A second mask layer is formed on a first mask layer. A patterning process is performed to the first mask layer and the second mask layer. The first mask layer is patterned to be a first mask pattern, and the second mask layer is patterned to be a second mask pattern formed on the first mask pattern. A first trim process is performed to the second mask pattern. A width of the second mask pattern is smaller than a width of the first mask pattern after the first trim process. A cover layer is formed covering the first mask pattern and the second mask pattern after the first trim process, and an etching process is performed to the first mask pattern after the step of forming the cover layer.
7 Citations
17 Claims
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1. A patterning method, comprising:
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forming a second mask layer on a first mask layer; performing a patterning process to the first mask layer and the second mask layer, wherein the first mask layer is patterned to be a first mask pattern, and the second mask layer is patterned to be a second mask pattern formed on the first mask pattern; performing a first trim process to the second mask pattern, wherein a width of the second mask pattern is smaller than a width of the first mask pattern after the first trim process; forming a cover layer covering the first mask pattern and the second mask pattern after the first trim process; performing an etching process to the first mask pattern after the step of forming the cover layer; removing a part of the cover layer for exposing the second mask pattern before the etching process; removing the second mask pattern before the etching process; and performing a second trim process to the cover layer after the step of removing the second mask pattern and before the etching process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification