Semiconductor manufacturing apparatus for manufacturing a semiconductor device having a high-K insulating film, and a method for manufacturing the semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, the method comprising:
- placing, in a processing chamber, a semiconductor substrate on which a mask layer having a predetermined pattern shape is formed on a high-k insulating film;
desorbing gas or a foreign matter adsorbed on a surface of the semiconductor substrate;
supplying reactive gas to the processing chamber in a state where a temperature of the semiconductor substrate falls below a predetermined temperature;
stopping the supply of the reactive gas and heating the semiconductor substrate; and
vaporizing an organometallic complex generated by reacting with a metal element included in the high-k insulating film and exhausting the vaporized organometallic complex from the processing chamber,wherein the reactive gas is mixed gas including complex-forming gas forming the organometallic complex by reacting with the metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex.
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Accused Products
Abstract
Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.
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Citations
7 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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placing, in a processing chamber, a semiconductor substrate on which a mask layer having a predetermined pattern shape is formed on a high-k insulating film; desorbing gas or a foreign matter adsorbed on a surface of the semiconductor substrate; supplying reactive gas to the processing chamber in a state where a temperature of the semiconductor substrate falls below a predetermined temperature; stopping the supply of the reactive gas and heating the semiconductor substrate; and vaporizing an organometallic complex generated by reacting with a metal element included in the high-k insulating film and exhausting the vaporized organometallic complex from the processing chamber, wherein the reactive gas is mixed gas including complex-forming gas forming the organometallic complex by reacting with the metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification