Semiconductor manufacturing apparatus for manufacturing a semiconductor device having a high-K insulating film, and a method for manufacturing the semiconductor device

• US 10,460,953 B2
• Filed: 02/26/2018
• Issued: 10/29/2019
• Est. Priority Date: 04/25/2017
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Yamaguchi, Yoshihide
• Primary Examiner(s): Malek, Maliheh
• Application Number:
  US15/904,878
• Publication Number:
  US 20180308707A1
• Time in Patent Office: 610 Days
• CPC Class Codes: C23C 16/45559 Diffusion of reactive gas to substrate
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02192 the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.

Claims

1. A method for manufacturing a semiconductor device, the method comprising:

placing, in a processing chamber, a semiconductor substrate on which a mask layer having a predetermined pattern shape is formed on a high-k insulating film;

desorbing gas or a foreign matter adsorbed on a surface of the semiconductor substrate;

supplying reactive gas to the processing chamber in a state where a temperature of the semiconductor substrate falls below a predetermined temperature;

stopping the supply of the reactive gas and heating the semiconductor substrate; and

vaporizing an organometallic complex generated by reacting with a metal element included in the high-k insulating film and exhausting the vaporized organometallic complex from the processing chamber,

wherein the reactive gas is mixed gas including complex-forming gas forming the organometallic complex by reacting with the metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex.

2. The method according to claim 1, wherein the metal element included in the high-k insulating film is a metal element classified in a fifth period and the following periods of a periodic table.

3. The method according to claim 1, wherein the metal element included in the high-k insulating film is a rare earth element.

4. The method according to claim 1, wherein a raw material for the complex-forming gas is an organic compound capable of forming at least two or more coordination bonds to a transition metal atom, that is, a so-called multidentate ligand molecule.

5. The method according to claim 4, wherein the raw material for the complex-forming gas includes any of diketones, ketoester, and ketoimine.

6. The method according to claim 1, wherein a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair such as an oxygen atom or a nitrogen atom in a molecular skeleton and five or more atoms except for a hydrogen atom and a fluorine atom.

7. The method according to claim 6, wherein the raw material for the complex stabilizing material gas is ethers.