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Semiconductor via structure with lower electrical resistance

  • US 10,460,990 B2
  • Filed: 11/01/2017
  • Issued: 10/29/2019
  • Est. Priority Date: 11/19/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive line including a first conductive material;

    a second conductive line including a second conductive material;

    a via including opposing tapered sidewalls each having a lower end contacting the first conductive material and an upper end contact the second conductive material, a distance between the lower end of the tapered sidewalls being less than a distance between the upper end of tapered sidewalls, the via connecting the first conductive line and the second conductive line, wherein the via includes a via material disposed between the tapered sidewalls such that the via material includes a via material top surface extending between the upper end of the tapered sidewalls and a via material bottom surface, wherein the via material bottom surface has a first contact area extending between the lower end of the tapered sidewalls that is in direct physical contact with the first conductive line, wherein the via material top surface is convex and has a second contact area that is greater than the first contact area;

    a first liner material coating inner surfaces of the via side walls; and

    a second liner material coating the via material top surface.

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