Semiconductor package structure and manufacturing method thereof
First Claim
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1. A semiconductor structure, comprising:
- a first die including a first surface and a second surface opposite to the first surface;
a molding surrounding the first die;
a via extended through the molding;
an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed below the first surface of the first die and the molding, and the conductive member is disposed within the dielectric layer;
a second die disposed over the molding and including a third surface facing the first die, a fourth surface opposite to the third surface and a sidewall between the third surface and the fourth surface;
a connector disposed between the second die and the via and being in contact with the third surface of the second die and the via; and
an underfill surrounding the connector and being in contact with a portion of the second surface of the first die,wherein the second die is electrically connected to the via, and the underfill covers a portion of the sidewall of the second die and exposes entirely the fourth surface of the second die.
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Abstract
A semiconductor structure includes a first die including a first surface and a second surface opposite to the first surface; a molding surrounding the first die; a first via extended through the molding; an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed below the first surface of the first die and the molding, and the conductive member is disposed within the dielectric layer; and a second die disposed over the molding, wherein the second die is electrically connected to the first via.
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Citations
20 Claims
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1. A semiconductor structure, comprising:
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a first die including a first surface and a second surface opposite to the first surface; a molding surrounding the first die; a via extended through the molding; an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed below the first surface of the first die and the molding, and the conductive member is disposed within the dielectric layer; a second die disposed over the molding and including a third surface facing the first die, a fourth surface opposite to the third surface and a sidewall between the third surface and the fourth surface; a connector disposed between the second die and the via and being in contact with the third surface of the second die and the via; and an underfill surrounding the connector and being in contact with a portion of the second surface of the first die, wherein the second die is electrically connected to the via, and the underfill covers a portion of the sidewall of the second die and exposes entirely the fourth surface of the second die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure, comprising:
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a first die including a first surface and a second surface opposite to the first surface; a molding surrounding the first die; a via extended through the molding; an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed below the first surface of the first die and the molding, and the conductive member is disposed within the dielectric layer; a second die disposed over the molding and the via and including a third surface facing the first die, a fourth surface opposite to the third surface and a sidewall between the third surface and the fourth surface; a first underfill disposed between the molding and the second die, and covering a portion of the sidewall of the second die and exposing entirely the fourth surface of the second die; a substrate including a fifth surface facing the interconnect structure and a sixth surface opposite to the fifth surface; a first conductive bump disposed between the interconnect structure and the fifth surface of the substrate; and a second conductive bump disposed over the sixth surface of the substrate, wherein the second die is disposed over at least a portion of the second surface of the first die. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor structure, comprising:
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forming an interconnect structure including a dielectric layer and a conductive member disposed within the dielectric layer; forming a via over the interconnect structure after the forming of the interconnect structure; disposing a first die over the interconnect structure; forming a molding over the interconnect structure and around the first die and the via after the disposing of the first die over the interconnect structure; disposing a second die over the molding; providing a substrate; disposing a first conductive bump between the interconnect structure and the substrate; disposing a first underfill between the interconnect structure and the substrate and around the first conductive bump; and disposing a second underfill between the molding and the second die, wherein a connector is disposed between the second die and the via and in contact with the via, and the second die is electrically connected to the via through the connector. - View Dependent Claims (18, 19, 20)
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Specification