Method for patterning a power metallization layer, electronic device and method for processing an electronic device
First Claim
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1. A method for processing an electronic device, the method comprising:
- forming a patterned hard mask layer over a copper power metallization layer, the patterned hard mask layer exposing a major outer surface of the copper power metallization layer; and
patterning the copper power metallization layer by wet etching of the exposed major surface of the copper power metallization layer, wherein forming the patterned hard mask layer comprises forming a patterned alumina layer with a thickness less than 15 nm, wherein the copper power metallization layer has a thickness greater than 5 μ
m.
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Abstract
According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.
4 Citations
20 Claims
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1. A method for processing an electronic device, the method comprising:
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forming a patterned hard mask layer over a copper power metallization layer, the patterned hard mask layer exposing a major outer surface of the copper power metallization layer; and patterning the copper power metallization layer by wet etching of the exposed major surface of the copper power metallization layer, wherein forming the patterned hard mask layer comprises forming a patterned alumina layer with a thickness less than 15 nm, wherein the copper power metallization layer has a thickness greater than 5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for processing an electronic device, the method comprising:
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forming a patterned hard mask layer over a copper power metallization layer, the patterned hard mask layer exposing a major outer surface of the copper power metallization layer; patterning the copper power metallization layer by wet etching of the exposed major surface of the copper power metallization layer; and forming a barrier layer, wherein the copper power metallization layer is formed over the barrier layer, and wherein a surface of the barrier layer is exposed after the patterning the copper power metallization layer, wherein the barrier layer comprises titanium and/or tungsten. - View Dependent Claims (8)
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9. A method for patterning a power metallization layer, the method comprising:
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forming a hard mask layer over the power metallization layer; forming a patterned soft mask layer over the hard mask layer and patterning the hard mask layer by wet etching to expose a major outer surface of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed major outer surface of the power metallization layer using an etch mask comprising the patterned hard mask layer and the patterned soft mask layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. An electronic device comprising:
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an electronic structure; a copper contact structure electrically contacting the electronic structure, the copper contact structure having a thickness greater than 5 μ
m; andan alumina protection layer having a thickness less than 15 nm and disposed over the copper contact structure, wherein the copper contact structure has a sidewall with a slope greater than 60°
. - View Dependent Claims (17, 18, 19, 20)
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Specification