Apparatuses and methods for semiconductor die heat dissipation

• US 10,461,061 B2
• Filed: 02/11/2019
• Issued: 10/29/2019
• Est. Priority Date: 02/19/2015
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vadhavkar, Sameer S., Li, Xiao, Chandolu, Anilkumar
• Primary Examiner(s): Naraghi, Ali
• Application Number:
  US16/272,190
• Publication Number:
  US 20190172817A1
• Time in Patent Office: 260 Days
• Field of Search: None
• CPC Class Codes: H01L 2225/06565 the devices having the same size and there being no auxiliary carrier between the devices
• CPC Class Codes: H01L 2225/06568 the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/42 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/16251 Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Abstract

Apparatuses and methods for semiconductor die heat dissipation are described. For example, an apparatus for semiconductor die heat dissipation may include a substrate and a heat spreader. The substrate may include a thermal interface layer disposed on a surface of the substrate, such as disposed between the substrate and the heat spreader. The heat spreader may include a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer.

Claims

1. An apparatus, comprising:

a substrate;

a thermal interface layer disposed on a surface of the substrate; and

a heat spreader with a plurality of substrate-facing protrusions in contact with the thermal interface layer,

wherein the heat spreader covers an entire surface of a top die of a stack of semiconductor die, and

wherein a thickness of the thermal interface layer under a face of the substrate-facing protrusions facing the substrate is thinner relative to a thickness of the thermal interface layer under areas of the heat spreader that have no substrate-facing protrusions.

2. The apparatus of claim 1, wherein the thermal interface layer is disposed between the substrate-facing protrusions and the entire surface of the top die.

3. The apparatus of claim 1, wherein a bottom surface of one or more of the substrate-facing protrusions are in contact with the surface of the top die.

4. The apparatus of claim 1, wherein the heat spreader includes a plurality of other substrate-facing protrusions in contact with another thermal interface layer disposed on a bottom die of the stack of semiconductor die.

5. The apparatus of claim 4, wherein a bottom surface of one or more of the other substrate-facing protrusions are in contact with a surface of the bottom die.

6. The apparatus of claim 1, wherein the plurality of substrate-facing protrusions are pillars protruding from an underside of the heat spreader.

7. The apparatus of claim 6, wherein each of the pillars has a bottom surface and one or more side surfaces.

8. The apparatus of claim 6, wherein each of the pillars has a rectangular or circular shape.

9. The apparatus of claim 1, wherein a bottom surface of one or more protrusions of the plurality of substrate-facing protrusions are in contact with the thermal interface layer, and a bottom surface of one or more other protrusions of the plurality of substrate-facing protrusions are in contact with the surface of the top die.

10. An apparatus, comprising:

a stack of semiconductor die, the stack of semiconductor die including a top die and a bottom die; and

a heat spreader including a first portion with a plurality of first protrusions and a second portion with a plurality of second protrusions, the first portion of the heat spreader covering an entire surface of the top die, the second portion of the heat spreader covering at least one entire surface of the bottom die.

11. The apparatus of claim 10, further comprising a thermal interface layer disposed on the top die,

wherein the thermal interface layer is disposed between the first portion of the heat spreader and the entire surface of the top die.

12. The apparatus of claim 10, wherein the plurality of first protrusions and the plurality of second protrusions are pillars protruding from an underside of each the first and second portions, respectively, of the heat spreader.

13. The apparatus of claim 10, wherein a bottom surface of one or more of the second protrusions are in contact with the at least one surface of the bottom die.

14. The apparatus of claim 10, wherein each of the first protrusions has a bottom surface and one or more side surfaces.

15. The apparatus of claim 10, wherein each of the first protrusions has a rectangular or circular shape, and each of the second protrusions has a rectangular or circular shape.