Well-based integration of heteroepitaxial N-type transistors with P-type transistors
First Claim
1. Integrated circuit (IC) structures, comprising:
- a well recess in a first region of a substrate, the well recess containing an amorphous well-isolation material over a bottom of the well recess, and a crystalline well material over the well-isolation material, wherein the well material is coupled to a seeding surface of the substrate at the bottom of the well recess by a crystalline pillar material that extends through the well-isolation material;
an amorphous fin-isolation material over a first surface of the well material, and over a second surface in a second region of the substrate adjacent to the first region wherein the first surface is substantially planar with the second surface; and
a first fin comprising a first crystalline material, wherein the first fin extends from the first surface of the well material and protrudes through the fin-isolation material to a first height over the fin-isolation material; and
a second fin comprising a second crystalline material, wherein the second fin extends from the second surface of the second region of the substrate and protrudes through the fin-isolation material to a second height over the fin-isolation material, the second height being substantially equal to the first height.
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Abstract
Non-silicon fin structures extend from a crystalline heteroepitaxial well material in a well recess of a substrate. III-V finFETs may be formed on the fin structures within the well recess while group IV finFETs are formed in a region of the substrate adjacent to the well recess. The well material may be electrically isolated from the substrate by an amorphous isolation material surrounding pillars passing through the isolation material that couple the well material to a seeding surface of the substrate and trap crystal growth defects. The pillars may be expanded over the well-isolation material by lateral epitaxial overgrowth, and the well recess filled with a single crystal of high quality. Well material may be planarized with adjacent substrate regions. N-type fin structures may be fabricated from the well material in succession with p-type fin structures fabricated from the substrate, or second epitaxial well.
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Citations
20 Claims
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1. Integrated circuit (IC) structures, comprising:
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a well recess in a first region of a substrate, the well recess containing an amorphous well-isolation material over a bottom of the well recess, and a crystalline well material over the well-isolation material, wherein the well material is coupled to a seeding surface of the substrate at the bottom of the well recess by a crystalline pillar material that extends through the well-isolation material; an amorphous fin-isolation material over a first surface of the well material, and over a second surface in a second region of the substrate adjacent to the first region wherein the first surface is substantially planar with the second surface; and a first fin comprising a first crystalline material, wherein the first fin extends from the first surface of the well material and protrudes through the fin-isolation material to a first height over the fin-isolation material; and a second fin comprising a second crystalline material, wherein the second fin extends from the second surface of the second region of the substrate and protrudes through the fin-isolation material to a second height over the fin-isolation material, the second height being substantially equal to the first height. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit (IC), comprising:
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an n-type finFET extending from one body of crystalline III-V material, the crystalline III-V material within a well recess in a first region of a crystalline silicon substrate, the well recess lined with a dielectric material, and wherein one or more pillars of the crystalline III-V material extend through the well-isolation material and couple to a seeding surface of the substrate; a p-type finFET in a second region of the crystalline silicon substrate; and a fin-isolation material over the well recess and over the second region, wherein the fin-isolation material extends around a sidewall of the crystalline III-V material, electrically insulating the well material from the second region of the substrate. - View Dependent Claims (11)
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12. A method of fabricating a pair of complementary field effect transistors, the method comprising:
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etching a well within a first region of a crystalline silicon substrate; backfilling the well with a dielectric material; forming one or more openings through the dielectric material that expose the substrate at a bottom of the well; epitaxially growing a crystalline pillar comprising a Group III-V alloy on the substrate expose within the openings; laterally overgrowing a III-V material from the pillar; planarizing the III-V material with a second region of the substrate; forming first fins in the III-V material, and forming second fins in the second region; forming first gate stacks over the first fins, and forming second gate stacks of the second fins; and forming contact metallization to a source and drain ends of the first and second fins. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. Integrated circuit (IC) structures, comprising:
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a well recess in a first region of a substrate, the well recess containing an amorphous well-isolation material over a bottom of the well recess, and a crystalline well material over the well-isolation material, wherein the well material is coupled to a seeding surface of the substrate at the bottom of the well recess by a crystalline pillar material that extends through the well-isolation material; an amorphous fin-isolation material over the well recess and over a second region of the substrate adjacent to the first region, wherein the fin-isolation material extends around a sidewall of the well material, electrically insulating the well material from the second region of the substrate; and a first fin comprising a first crystalline material, wherein the first fin extends from the well material and protrudes through the fin-isolation material; and a second fin comprising a second crystalline material, wherein the second fin extends from the second region of the substrate and protrudes through the fin-isolation material.
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Specification