Metal oxide film and method for forming metal oxide film
First Claim
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1. A method for manufacturing a metal oxide film comprising:
- forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%,wherein the sputtering target comprises indium, gallium and zinc,wherein the metal oxide film comprises a plurality of crystal parts when the metal oxide film is formed,wherein a size of one of the plurality of crystal parts is less than or equal to 10 nm, andwherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film.
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Abstract
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
189 Citations
19 Claims
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1. A method for manufacturing a metal oxide film comprising:
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forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%, wherein the sputtering target comprises indium, gallium and zinc, wherein the metal oxide film comprises a plurality of crystal parts when the metal oxide film is formed, wherein a size of one of the plurality of crystal parts is less than or equal to 10 nm, and wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a metal oxide film comprising:
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forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%, wherein the sputtering target comprises indium, gallium and zinc, wherein the metal oxide film comprises a crystal part when the metal oxide film is formed, wherein a size of the crystal part is less than or equal to 10 nm, wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film, and wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the metal oxide film. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method for manufacturing a metal oxide film comprising:
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forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%, wherein the sputtering target comprises indium, gallium and zinc, wherein the metal oxide film comprises a crystal part when the metal oxide film is formed, wherein a size of the crystal part is less than or equal to 10 nm, wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film, wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and
less than or equal to an area with a diameter of 10 nmφ
in a nanobeam electron diffraction pattern of a cross-section of the metal oxide film, andwherein a halo pattern is observable in a selected-area electron diffraction pattern of a plane of the metal oxide film. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification