Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer over a first insulating film;
the oxide semiconductor layer comprising a first region and a second region;
a transistor over an insulating surface, the transistor including;
a source electrode layer and a drain electrode layer;
a second insulating film over the first region; and
a gate electrode layer over the first region with the second insulating film therebetween;
a transparent conductive film overlapping with the second region;
a dielectric between the second region and the transparent conductive film; and
a capacitor comprisingthe second region;
the transparent conductive film; and
the dielectric serving as a dielectric of the capacitor,wherein the dielectric is in direct contact with a side edge surface of the second insulating film, a first electrode of the capacitor, and a second electrode of the capacitor.
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Accused Products
Abstract
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.
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Citations
17 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer over a first insulating film; the oxide semiconductor layer comprising a first region and a second region; a transistor over an insulating surface, the transistor including; a source electrode layer and a drain electrode layer; a second insulating film over the first region; and a gate electrode layer over the first region with the second insulating film therebetween; a transparent conductive film overlapping with the second region; a dielectric between the second region and the transparent conductive film; and a capacitor comprising the second region; the transparent conductive film; and the dielectric serving as a dielectric of the capacitor, wherein the dielectric is in direct contact with a side edge surface of the second insulating film, a first electrode of the capacitor, and a second electrode of the capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification