Bottom isolation for nanosheet transistors on bulk substrate
First Claim
1. A method of forming nanosheets comprising:
- providing at least two stacks of semiconductor material layers on a supporting bulk semiconductor substrate, wherein the at least two stacks of semiconductor material layers includes a sacrificial semiconductor layer of a first composition, and a nanosheet semiconductor layer of a second composition, and removing the sacrificial semiconductor layer to provide nanosheets composed of the nanosheet semiconductor layer;
forming a first undercut region filled with a first dielectric material extending from an opening into the supporting bulk semiconductor substrate underlying the semiconductor material layers of the at least two stacks of semiconductor material layers; and
forming a second undercut region into the supporting bulk semiconductor substrate filled with a second dielectric material from a side of the at least two stacks of semiconductor material layers that is opposite a side of the at least two stacks of semiconductor material layers at which the first undercut region is positioned, wherein the first and second dielectric materials provide an isolation region.
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Abstract
A method of forming nanosheets that includes providing a stack of semiconductor material layers on a supporting bulk substrate. A first undercut region filled with a first dielectric material is formed extending from the opening into the bulk semiconductor substrate underlying the semiconductor material layers of the at least two stacks of semiconductor material layers. A second undercut region into the bulk semiconductor substrate filled with a second dielectric material from a side of the at least two stacks of semiconductor material layers that is opposite a side of the at least two stacks of semiconductor material layer at which the first undercut region is positioned. The first and second dielectric material merged that provide a full isolation region.
52 Citations
16 Claims
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1. A method of forming nanosheets comprising:
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providing at least two stacks of semiconductor material layers on a supporting bulk semiconductor substrate, wherein the at least two stacks of semiconductor material layers includes a sacrificial semiconductor layer of a first composition, and a nanosheet semiconductor layer of a second composition, and removing the sacrificial semiconductor layer to provide nanosheets composed of the nanosheet semiconductor layer; forming a first undercut region filled with a first dielectric material extending from an opening into the supporting bulk semiconductor substrate underlying the semiconductor material layers of the at least two stacks of semiconductor material layers; and forming a second undercut region into the supporting bulk semiconductor substrate filled with a second dielectric material from a side of the at least two stacks of semiconductor material layers that is opposite a side of the at least two stacks of semiconductor material layers at which the first undercut region is positioned, wherein the first and second dielectric materials provide an isolation region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a nanosheet device comprising:
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providing at least two stacks of semiconductor material layers on a supporting bulk semiconductor substrate; depositing a supporting dielectric layer over the at least two stacks having an opening exposing a space between adjacent stacks of semiconductor material layer for the at least two stacks of semiconductor material layers; forming a first undercut region extending from the opening into the supporting bulk semiconductor substrate underlying the semiconductor material layers of the at least two stacks of semiconductor material layers; filling the first undercut region with a first dielectric material; removing the supporting dielectric layer; forming a second undercut region into the supporting bulk semiconductor substrate from a side of the at least two stacks of semiconductor material layers that is opposite a side of the at least two stacks of semiconductor material layer at which the first undercut region is positioned; forming a second dielectric material to fill the second undercut region, wherein the first and second dielectric material provide an isolation region underlying an entirety of the semiconductor material layers; and positioning a channel region of a semiconductor device in a nanosheet provided by at least one of the semiconductor material layers in the stacks of semiconductor material layers. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a bulk semiconductor substrate; an isolation region present in an upper surface of the bulk semiconductor substrate, the isolation region comprised of two dielectric fill regions having an interface merged within the isolation region, wherein the two fill regions are comprised of a different composition dielectric material; a plurality of nanosheets present overlying the isolation region, wherein the interface of the two dielectric fill regions is substantially merged under the width of the plurality of nanosheets; a gate structure present on a channel region portion of the plurality of nanosheets; and source and drain regions on opposing sides of the channel region portion of the plurality of nanosheets. - View Dependent Claims (16)
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Specification