Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
First Claim
1. A method comprising:
- forming an isolation region in a substrate, wherein the isolation region is between a first and second region of the substrate, and wherein at least a portion of the isolation region is configured to extend from a top surface of the substrate;
forming a first highly doped source/drain contact region in the first region of the substrate and a second highly doped source/drain contact region in the second region of the substrate;
forming a first gate electrode over the first highly doped source/drain contact region;
forming a second gate electrode over the second highly doped source/drain contact region;
forming a first opening through the first gate electrode and to the first highly doped source/drain contact region;
forming a second opening through the second gate electrode and to the second highly doped source/drain contact region;
depositing a first bismuth-containing semiconductor material in the first opening to form a first bismuth-containing channel structure, the first bismuth-containing channel structure being connected to the first highly doped source/drain contact region;
depositing a second bismuth-containing semiconductor material in the second opening to form a second bismuth-containing channel structure, the second bismuth-containing channel structure being connected to the second highly doped source/drain contact region;
forming a third source/drain contact region over and connected to the first bismuth-containing channel structure;
forming a fourth source/drain contact region over and connected to the second bismuth-containing channel structure;
forming a dielectric layer over the third source/drain contact region and the fourth source/drain contact region; and
crystallizing the first and second bismuth-containing semiconductor materials, the crystallizing comprising performing an anneal.
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Abstract
Devices, and methods of forming such devices, having a material that is semimetal when in bulk but is a semiconductor in the devices are described. An example structure includes a substrate, a first source/drain contact region, a channel structure, a gate dielectric, a gate electrode, and a second source/drain contact region. The substrate has an upper surface. The channel structure is connected to and over the first source/drain contact region, and the channel structure is over the upper surface of the substrate. The channel structure has a sidewall that extends above the first source/drain contact region. The channel structure comprises a bismuth-containing semiconductor material. The gate dielectric is along the sidewall of the channel structure. The gate electrode is along the gate dielectric. The second source/drain contact region is connected to and over the channel structure.
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Citations
20 Claims
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1. A method comprising:
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forming an isolation region in a substrate, wherein the isolation region is between a first and second region of the substrate, and wherein at least a portion of the isolation region is configured to extend from a top surface of the substrate; forming a first highly doped source/drain contact region in the first region of the substrate and a second highly doped source/drain contact region in the second region of the substrate; forming a first gate electrode over the first highly doped source/drain contact region; forming a second gate electrode over the second highly doped source/drain contact region; forming a first opening through the first gate electrode and to the first highly doped source/drain contact region; forming a second opening through the second gate electrode and to the second highly doped source/drain contact region; depositing a first bismuth-containing semiconductor material in the first opening to form a first bismuth-containing channel structure, the first bismuth-containing channel structure being connected to the first highly doped source/drain contact region; depositing a second bismuth-containing semiconductor material in the second opening to form a second bismuth-containing channel structure, the second bismuth-containing channel structure being connected to the second highly doped source/drain contact region; forming a third source/drain contact region over and connected to the first bismuth-containing channel structure; forming a fourth source/drain contact region over and connected to the second bismuth-containing channel structure; forming a dielectric layer over the third source/drain contact region and the fourth source/drain contact region; and crystallizing the first and second bismuth-containing semiconductor materials, the crystallizing comprising performing an anneal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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forming an isolation region in a substrate, wherein the isolation region extends to an upper surface of the substrate; forming a first highly doped source/drain contact region adjacent a first sidewall of the isolation region; forming a first dielectric layer over the first highly doped source/drain contact region; forming a conductive layer over the first dielectric layer; forming a second dielectric layer over the conductive layer; forming a first opening through the second dielectric layer, the conductive layer, and the first dielectric layer to the first highly doped source/drain contact region; and forming a semiconductor material in the first opening, wherein forming the semiconductor material comprises forming a bismuth-containing material in an amorphous or polycrystalline state, and further comprising annealing, the annealing crystallizing the bismuth-containing material. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method comprising:
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forming a first highly doped source/drain contact region in a substrate; forming a first dielectric layer over the first highly doped source/drain contact region; forming a conductive layer over the first dielectric layer; forming a second dielectric layer over the conductive layer; forming a first opening through the second dielectric layer, the conductive layer, and the first dielectric layer to the first highly doped source/drain contact region; forming a gate dielectric along sidewalls of the first opening; forming a semiconductor material in the first opening, the semiconductor material having a channel region and a second highly doped source/drain contact region, the semiconductor material being amorphous or polycrystalline, the semiconductor material comprising a bismuth-containing material; and crystallizing the semiconductor material by annealing. - View Dependent Claims (18, 19, 20)
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Specification