Semiconductor devices, a fluid sensor and a method for forming a semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a quantum well layer stack comprising a plurality of first quantum well layers and a plurality of second quantum well layers, wherein first quantum well layers of the plurality of first quantum well layers and second quantum well layers of the plurality of second quantum well layers are arranged alternatingly on a first semiconductor layer structure,wherein the first quantum well layers of the plurality of first quantum well layers comprise silicon-germanium and the second quantum well layers of the plurality of second quantum well layers comprise silicon,wherein the first quantum well layers of the plurality of first quantum well layers and the second quantum well layers of the plurality of second quantum well layers have a thickness of below 100 nm, andwherein the quantum well layer stack is configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m.
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Abstract
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
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Citations
9 Claims
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1. A semiconductor device, comprising:
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a quantum well layer stack comprising a plurality of first quantum well layers and a plurality of second quantum well layers, wherein first quantum well layers of the plurality of first quantum well layers and second quantum well layers of the plurality of second quantum well layers are arranged alternatingly on a first semiconductor layer structure, wherein the first quantum well layers of the plurality of first quantum well layers comprise silicon-germanium and the second quantum well layers of the plurality of second quantum well layers comprise silicon, wherein the first quantum well layers of the plurality of first quantum well layers and the second quantum well layers of the plurality of second quantum well layers have a thickness of below 100 nm, and wherein the quantum well layer stack is configured to emit light with a light emission maximum at a wavelength of between 2 μ
m and 10 μ
m or to absorb light with a light absorption maximum at a wavelength of between 2 μ
m and 10 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification