Method of manufacturing light-emitting device

• US 10,461,215 B2
• Filed: 06/29/2018
• Issued: 10/29/2019
• Est. Priority Date: 06/30/2017
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kususe, Takeshi, Shichijo, Satoshi, Sugimoto, Kunihito
• Primary Examiner(s): Smoot, Stephen W
• Application Number:
  US16/024,620
• Publication Number:
  US 20190006554A1
• Time in Patent Office: 487 Days
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/18161 of a flip chip
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method of manufacturing a light-emitting device includes: directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes; subsequently, forming stud bumps on each electrode of each light-emitting element; subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.

Claims

1. A method of manufacturing a light-emitting device, the method comprising:

directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes;

subsequently, forming stud bumps on each electrode of each light-emitting element;

subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and

subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.

2. The method according to claim 1, wherein, after the step of dividing the collective light-transmissive member, each of the plurality of light-transmissive members contains a wavelength conversion substance.

3. The method according to claim 1, further comprising, after the step of directly bonding the plurality of light-emitting elements to the collective light-transmissive member, and before the step of forming the stud bumps, forming an antireflective film on a surface of the collective light transmissive member opposite to a surface at which the light-emitting elements are bonded.

4. The method according to claim 3, wherein the antireflective film comprises SiO₂ or ZrO₂.

5. The method according to claim 1, further comprising, after the step of forming the stud bumps, and before the step of dividing the collective light-transmissive member, covering lateral surfaces of the plurality of light-emitting elements with a light guide member.

6. The method according to claim 1, further comprising, after the step of mounting the light-emitting elements, forming a covering member to cover lateral surfaces of the stud bumps.

7. The method according to claim 6, wherein the covering member comprises a light-reflective resin material.

8. The method according to claim 1, wherein the step of directly bonding the plurality of light-emitting elements to the collective light-transmissive member is performed by one of surface-activated bonding, hydroxyl group bonding, or atomic diffusion bonding.

9. The method according to claim 1,

wherein, in the step of directly bonding a plurality of light-emitting elements to a collective light-transmissive member, each light-emitting element comprises:

a support substrate bonded to the collective light-transmissive member, and

a semiconductor structure formed on the support substrate, the semiconductor structure comprising, in order from the support substrate;

a first semiconductor layer, and active layer, and a second semiconductor layer, and

a plurality of exposed portions at which the first semiconductor layer is exposed from the second semiconductor layer, and

wherein, in the step of forming the stud bumps, the stud bumps are formed to be separated from the exposed portions in a plan view.

10. The method according to claim 9, wherein:

each light-emitting element comprises first electrodes and a second electrode, both formed on an upper side of the semiconductor structure, and

the second electrode is interposed between the first electrodes in a plan view.

11. The method according to claim 1, wherein, after the step of dividing the collective light-transmissive member, each of the plurality of light-transmissive members contains a light-diffusing substance.

12. The method according to claim 1, wherein, after the step of dividing the collective light-transmissive member, each of the plurality of light-transmissive members has a thickness in a range of approximately 50 μ

m to approximately 300 μ

m.

13. The method according to claim 1, wherein the stud bumps are at intervals each of which is in a range of approximately 10 μ

m to approximately 45 μ

m in plan view.