Semiconductor device with improved light propagation

• US 10,461,221 B2
• Filed: 01/18/2017
• Issued: 10/29/2019
• Est. Priority Date: 01/18/2016
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Dobrinsky, Alexander, Shur, Michael
• Primary Examiner(s): Lee, Eugene
• Application Number:
  US15/409,438
• Publication Number:
  US 20170207367A1
• Time in Patent Office: 1,014 Days
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.

Claims

1. A semiconductor structure comprising:

a layer transparent to radiation having a target wavelength, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength, wherein an average thickness of each of the plurality of vacancies is approximately one tenth of an average distance between adjacent vacancies in the plurality of vacancies.

2. The structure of claim 1, further comprising a set of semiconductor layers grown on the first side of the layer, wherein the set of semiconductor layers includes a light generating structure configured to emit radiation having the target wavelength.

3. The structure of claim 2, wherein the layer comprises a sapphire substrate.

4. The structure of claim 2, wherein the first side of the layer comprises a second profiled surface, the second profiled surface including a second plurality of vacancies fabricated in the material of the layer.

5. An optoelectronic device comprising:

an active region configured to operate in relation to electromagnetic radiation having a target wavelength; and

a transparent layer located adjacent to the active region, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side during operation of the optoelectronic device, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the transparent layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength, wherein an average thickness of each of the plurality of vacancies is approximately one tenth of an average distance between adjacent vacancies in the plurality of vacancies.

6. The device of claim 5, wherein each vacancy comprises a groove, wherein the thickness is at most approximately one tenth of a depth of the groove.

7. The device of claim 6, wherein a characteristic distance between adjacent grooves is such that a ray forming an angle with the normal of the second side that is at least an angle of total internal reflection impacts at least one of the plurality of grooves prior to the second side.

8. The device of claim 5, wherein the transparent layer comprises a sapphire substrate.

9. The device of claim 8, wherein the sapphire substrate is a truncated prism.

10. The device of claim 5, further comprising:

a buffer layer located directly on the first side of the transparent layer; and

a n-type layer located directly on the buffer layer, wherein the active region is located on the n-type layer, wherein the active region is configured to emit the electromagnetic radiation having the target wavelength.

11. The device of claim 10, wherein the first side of the transparent layer comprises a second profiled surface, the second profiled surface including a second plurality of vacancies fabricated in the transparent layer.

12. The device of claim 10, wherein a side of the buffer layer immediately adjacent to the n-type layer includes a second profiled surface, the second profiled surface including a second plurality of vacancies fabricated in the material of the buffer layer.

15. The device of claim 5, wherein each vacancy comprises a groove, wherein the groove has a depth larger than the thickness of the groove.

16. The device of claim 15, wherein a characteristic distance between adjacent grooves is such that a ray forming an angle with the normal of the second side that is at least an angle of total internal reflection impacts at least one of the plurality of grooves prior to the second side.

17. The device of claim 15, wherein the thickness is at most one tenth the depth of the groove.

18. The device of claim 15, wherein the plurality of grooves form a rectangular mesh.

19. The device of claim 5, wherein each of the plurality of vacancies has a length and a width smaller than a depth.

20. The device of claim 5, wherein each of the plurality of vacancies is at least partially filled with a diffusive scattering material.

13. An emitting device comprising:

a sapphire substrate;

a buffer layer located on a first side of the sapphire substrate; and

an active region located on the buffer layer, wherein the active region is configured to emit electromagnetic radiation having a target wavelength, wherein the radiation of the target wavelength enters the sapphire substrate through the first side and exits the sapphire substrate through a second side opposite the first side during operation of the emitting device, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the sapphire substrate, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength, wherein an average thickness of each of the plurality of vacancies is approximately one tenth of an average distance between adjacent vacancies in the plurality of vacancies.

14. The device of claim 13, wherein the first side of the sapphire substrate comprises a second profiled surface, the second profiled surface including a second plurality of vacancies fabricated in the sapphire substrate.