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Light emitting diode component

  • US 10,461,230 B2
  • Filed: 05/07/2018
  • Issued: 10/29/2019
  • Est. Priority Date: 04/25/2013
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • providing a light emitting semiconductor structure grown on a growth substrate;

    removing at least a portion of the growth substrate; and

    forming a multilayer structure arranged to guide light out from a surface of the light emitting semiconductor structure, the multilayer structure covering the surface of the light emitting structure, the multilayer structure comprising a plurality of layers, wherein an i+1;

    th layer is arranged on top an i;

    th layer in a sequence as seen from the light emitting semiconductor structure, wherein a refractive index, ni, of the i;

    th layer is greater than a refractive index, ni+1, of the i+1;

    th layer, wherein the value of i is selected from the set of positive integers, wherein a thickness of the i+1;

    th layer is greater than a thickness of the i;

    th layer.

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