High reliability RF switch based on phase-change material

• US 10,461,253 B1
• Filed: 08/14/2018
• Issued: 10/29/2019
• Est. Priority Date: 08/14/2018
• Status: Active Grant

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Inventors: Slovin, Gregory P., Howard, David J., Rose, Jefferson E., DeBar, Michael J., El-Hinnawy, Nabil
• Primary Examiner(s): Bernstein, Allison
• Application Number:
  US16/103,587
• Time in Patent Office: 441 Days
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/861 Thermal details
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

A radio frequency (RF) switch includes a heating element, a nugget, a phase-change material (PCM), and input/output contacts. The nugget comprises thermally conductive and electrically insulating material, and is situated on top of the heating element. The PCM has an active segment approximately situated over the nugget, and passive segments approximately situated under the input/output contacts. The PCM RF switch may include thermally resistive material adjacent to first and second sides of the heating element, and/or adjacent to first and second sides of the nugget. The PCM RF switch may include a heat valve under the heating element.

Claims

1. A radio frequency (RF) switch comprising:

a heating element;

a thermally resistive material adjacent to first and second sides of said heating element;

a heat valve under said heating element;

a heat spreader under said heat valve and over a substrate;

a nugget comprising a thermally conductive and electrically insulating material situated on top of said heating element;

a phase-change material having an active segment situated approximately over said nugget and passive segments situated approximately under input/output contacts of said RF switch.

2. The RF switch of claim 1, wherein said phase-change material is selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

3. The RF switch of claim 1, wherein said thermally resistive material is adjacent to first and second sides of said nugget.

4. The RF switch of claim 1, wherein said heat spreader comprises aluminum nitride (AlN).

5. The RF switch of claim 1, wherein said thermally resistive material is under said heating element and performs as said heat valve.

6. The RF switch of claim 1, wherein said passive segments of said phase-change material are situated approximately over said thermally resistive material.

7. The RF switch of claim 1, wherein said thermally conductive and electrically insulating material comprises aluminum nitride (AlN).

8. The RF switch of claim 1, wherein said heating element comprises tungsten (W).

9. The RF switch of claim 1, further comprising a segment of silicon nitride under said phase-change material.

10. The RF switch of claim 9, further comprising another segment of silicon nitride over said phase-change material.

11. A radio frequency (RF) switch comprising:

a heating element;

a heat valve under said heating element;

a heat spreader under said heat valve and over a substrate;

a nugget comprising a thermally conductive and electrically insulating material situated on top of said heating element;

a phase-change material having an active segment situated approximately over said nugget and passive segments situated approximately under input/output contacts of said RF switch.

12. The RF switch of claim 11, wherein said phase-change material is selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

13. The RF switch of claim 11, wherein said thermally conductive and electrically insulating material comprises aluminum nitride (AlN), and wherein said heating element comprises tungsten (W).

14. The RF switch of claim 11, further comprising a segment of silicon nitride under said phase-change material.

15. The RF switch of claim 14, further comprising another segment of silicon nitride over said phase-change material.