Methods of graphene growth and related structures
First Claim
1. A device, comprising:
- a substrate having a first surface that includes a curved region;
a conformal graphene layer disposed over the substrate, wherein the conformal graphene layer includes a second surface that follows a first surface contour of the curved region to provide a curved graphene layer within the curved region; and
a source/drain electrode in contact with the conformal graphene layer outside the curved region.
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Abstract
A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.
19 Citations
20 Claims
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1. A device, comprising:
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a substrate having a first surface that includes a curved region; a conformal graphene layer disposed over the substrate, wherein the conformal graphene layer includes a second surface that follows a first surface contour of the curved region to provide a curved graphene layer within the curved region; and a source/drain electrode in contact with the conformal graphene layer outside the curved region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A device, comprising:
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a substrate including a first surface contour defined by a first region and a second region adjacent to and on either side of the first region, wherein the first region includes a curved region and wherein the second region includes a substantially planar region; an insulating layer formed over the first and second regions of the substrate, wherein the insulating layer includes a second surface contour that conforms to the first surface contour of the substrate; a graphene layer formed over the insulating layer, wherein the graphene layer includes a third surface contour that conforms to the second surface contour of the insulating layer, wherein the graphene layer over the first region includes a curved graphene layer, and wherein the graphene layer over the second region includes a substantially planar graphene layer; and source and drain electrodes in contact with the graphene layer in the second region. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a substrate including a nanorod, wherein the nanorod includes an insulating outer surface that traverses a circumference of the nanorod; and a carbon nanotube (CNT) disposed on the insulating outer surface of the nanorod; wherein the nanorod includes a first diameter, wherein the CNT includes a second diameter substantially equal to the first diameter, and wherein a CNT band gap is determined at least in part by the first diameter. - View Dependent Claims (19, 20)
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Specification