Semiconductor device

• US 10,461,736 B2
• Filed: 02/18/2019
• Issued: 10/29/2019
• Est. Priority Date: 08/26/2016
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Kato, Yoshitaka, Komiya, Kenji, Shindo, Yusuke, Hayashi, Yoshinori, Wakabayashi, Kenichi
• Primary Examiner(s): Cox, Cassandra F
• Application Number:
  US16/278,337
• Publication Number:
  US 20190181856A1
• Time in Patent Office: 253 Days
• Field of Search: None
• CPC Class Codes: H02M 1/0009 Devices or circuits for detecting current in a converter
• CPC Class Codes: H02M 1/007 Plural converter units in cascade push-pull DC/DC converters with pre-regulator H02M3/3374; DC-AC converters following a DC-DC stage including a high frequency transformer H02M7/4807; DC-AC converters following a DC-DC conversion stage generating periodically varying voltages H02M7/4826
• CPC Class Codes: H02M 1/08 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• CPC Class Codes: H02M 1/32 Means for protecting converters other than automatic disconnection
• CPC Class Codes: H02M 3/158 including plural semiconductor devices as final control devices for a single load
• CPC Class Codes: H02M 7/537 using semiconductor devices only, e.g. single switched pulse inverters
• CPC Class Codes: H02M 7/53875 with analogue control of three-phase output
• CPC Class Codes: H03K 17/166 Soft switching
• CPC Class Codes: H03K 2217/0081 Power supply means, e.g. to the switch driver

Abstract

A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.

Claims

1. A semiconductor device controlling a power switching device to turn on and off, the power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal, the semiconductor device comprising:

an output current detector configured to detect a current value correlated with the output current;

a voltage detector configured to detect a voltage, which is across the output terminals of the power switching device or is correlated with the voltage across the output terminals;

a clamp circuit configured to clamp the gate voltage at a predetermined value; and

a controller configured to control the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector, wherein;

the controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current, which flows during having a short circuit in the power switching device, to be larger than a threshold current required for detecting the short circuit in the power switching device.

2. The semiconductor device according to claim 1, wherein:

the controller determines the gate voltage continuously according to the voltage, which is across the output terminals of the power switching device or is correlated with the voltage across the output terminals.

3. The semiconductor device according to claim 1, wherein:

the controller determines the gate voltage discretely according to the voltage, which is across the output terminals of the power switching device or is correlated with the voltage across the output terminals.

4. The semiconductor device according to claim 3, wherein:

the voltage, which is across the output terminals of the power switching device or is correlated with the voltage across the output terminals, is divided into equal sections; and

the controller determines the gate voltage according to the voltage.

5. The semiconductor device according to claim 3, wherein:

the voltage, which is across the output terminals of the power switching device or is correlated with the voltage across the output terminals, is subdivided into smaller sections as the detected voltage increases; and

the controller determines the gate voltage according to the voltage.

6. The semiconductor device according to claim 1, wherein:

the power switching device is configured by a wide-bandgap semiconductor.

7. The semiconductor device according to claim 1, wherein:

the clamp circuit includes an operational amplifier, a MOS transistor, and a variable power supply configured to generate a reference voltage;

the gate terminal of the power switching device is connected to a non-inverting input terminal of the operational amplifier;

a drain terminal of the MOS transistor is connected to the non-inverting input terminal of the operational amplifier, and is connected to the gate terminal of the power switching device;

a source terminal of the MOS transistor is connected to a reference potential, which has a voltage lower than the gate voltage;

an inverting input terminal of the operational amplifier is connected with the variable power supply to be at the reference voltage; and

the controller determines the reference voltage to adjust the gate voltage.

8. The semiconductor device according to claim 1, wherein:

the minimum voltage is set as the gate voltage to detect the short circuit in the power switching device.

9. The semiconductor device according to claim 4, wherein:

a range of the voltage, which is across the output terminals or is correlated with the voltage across the output terminals, is divided into equal sections.

10. The semiconductor device according to claim 5, wherein:

a range of the voltage, which is across the output terminals or is correlated with the voltage across the output terminals, is subdivided into smaller sections as the detected voltage increases.