Power switch and semiconductor device thereof
First Claim
Patent Images
1. A power switch, comprising:
- a first transistor cell comprising a first electrode;
a second transistor cell comprising a second electrode;
a body region disposed between the first transistor cell and the second transistor cell; and
a conductive layer electrically connected with the body region, the first electrode and the second electrode respectively,wherein the body region has a base electrode voltage selectively maintained at a lower one of a first voltage and a second voltage, the first transistor cell is controlled by the second voltage and the second transistor cell is controlled by the first voltage.
1 Assignment
0 Petitions
Accused Products
Abstract
A power switch and a semiconductor device thereof are disclosed. The power switch device includes a first transistor cell, a second transistor cell, a body region and a conductive layer. The first transistor cell includes a first electrode. The second transistor cell includes a second electrode. The body region is disposed between the first transistor cell and the second transistor cell. The conductive layer is electrically connected with the body region, the first electrode and the second electrode respectively.
19 Citations
12 Claims
-
1. A power switch, comprising:
-
a first transistor cell comprising a first electrode; a second transistor cell comprising a second electrode; a body region disposed between the first transistor cell and the second transistor cell; and a conductive layer electrically connected with the body region, the first electrode and the second electrode respectively, wherein the body region has a base electrode voltage selectively maintained at a lower one of a first voltage and a second voltage, the first transistor cell is controlled by the second voltage and the second transistor cell is controlled by the first voltage. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device of a power switch, comprising:
-
a substrate having a first conductive material; a first well, disposed on the substrate, having a second conductive material; a second well, disposed on the first well, having the first conductive material; a first transistor cell, disposed in the second well, having a first electrode; a second transistor cell, disposed in the second well, having a second electrode; and a metal layer, disposed on a surface of the semiconductor device and electrically connected with the first electrode, the second electrode and the second well respectively. - View Dependent Claims (7, 8, 9, 10, 11, 12)
-
Specification