Carbon bridged aminosilane compounds for high growth rate silicon-containing films

• US 10,464,953 B2
• Filed: 10/04/2017
• Issued: 11/05/2019
• Est. Priority Date: 10/14/2016
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Versum Materials US Inc.
• Inventors: Wang, Meiliang, Lei, Xinjian, Xiao, Manchao, Rajaraman, Suresh Kalpatu
• Primary Examiner(s): Kebede, Brook
• Application Number:
  US15/725,122
• Publication Number:
  US 20180105541A1
• Time in Patent Office: 762 Days
• Field of Search: 438778, 438786, 438789, 438790, 438793, 438794
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A:

wherein R, R¹, R², R³, R⁴, and R⁵ are defined herein.

Claims

1. A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:

a) providing a substrate in a reactor;

b) introducing into the reactor at least one silicon precursor compound comprising at least one organoaminocarbosilane compound, wherein the at least one organoaminocarbosilane compound has at least one SiH₂ or SiMeH group and is represented by the structure of Formula A;

2. The method of claim 1, wherein the compound of Formula A is selected from the group consisting of 1-dimethylamino-4,4-dimethyl-1,4-disilapentane, 1-diethylamino-4,4-dimethyl-1,4-disilapentane, 1-ethylmethylamino-4,4-dimethyl-1,4-disilapentane, 1-di-iso-propylamino-4,4-dimethyl-1,4-disilapentane, 1-di-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-piperindino-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-piperindino-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-pyrrolidino-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpyrrolidino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylmethylamino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylethylamino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexyl-iso-propylamino-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-1-methyl-4,4-diethyl-1,4-disilapentane, 1-ethylmethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-di-iso-propylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-di-sec-butylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-piperindino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpiperindino-sec-butylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-pyrrolidino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpyrrolidino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylmethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexyl-iso-propylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-5,5-dimethyl-1,5-disilahexane, 1-diethylamino-5,5-dimethyl-1,5-disilahexane, 1-ethylmethylamino-4,4-dimethyl-4,4-dimethyl-1,5-disilahexane, 1-di-iso-propylamino-5,5-dimethyl-1,5-disilahexane, 1-di-sec-butylamino-5,5-dimethyl-1,5-disilahexane, 1-piperindino-5,5-dimethyl-1,5-disilahexane, 1-2,6-dimethylpiperindino-5,5-dimethyl-1,5-disilahexane, 1-pyrrolidino-5,5-dimethyl-1,5-disilahexane, 1-2,5-dimethylpyrrolidino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylmethylamino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylethylamino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexyl-iso-propylamino-5,5-dimethyl-1,5-disilahexane, 1-dimethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-diethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-ethylmethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-di-iso-propylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-di-sec-butylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-piperindino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-2,6-dimethylpiperindino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-pyrrolidino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-2,5-dimethylpyrrolidino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylmethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylethylamino-1-methyl5,5-dimethyl-1,5-disilahexane, and 1-cyclohexyl-iso-propylamino-1-methyl-5,5-dimethyl-1,5-disilahexane.

3. The method of claim 1, wherein the oxygen-containing source is selected from the group consisting of ozone, an oxygen plasma, a plasma comprising oxygen and argon, a plasma comprising oxygen and helium, an ozone plasma, a water plasma, a nitrous oxide plasma, a carbon dioxide plasma, and combinations thereof.

4. The method of claim 1 wherein the oxygen-containing source comprises a plasma.

5. The method of claim 4 wherein the plasma is generated in situ.

6. The method of claim 4 wherein the plasma is generated remotely.

7. The method of claim 4 wherein the film has a density of about 2.0 g/cm³ or greater.

8. The method of claim 1 wherein the film further comprises carbon.

9. The method of claim 8 wherein the film has a density of about 1.8 g/cm³ or greater.

10. The method of claim 8 wherein the carbon content of the film is 0.5 atomic weight percent (at. %) or greater as measured by x-ray photospectroscopy.

11. The method of claim 1 wherein the organoaminocarbosilane compound is substantially free of one or more impurities selected from the group consisting of a halide, metal ions, metal, and combinations thereof.

19. A film obtained by the method of claim 1.

20. The film of claim 19 comprising at least one of the following characteristics:

a density of at least about 2.0 g/cm³;

a wet etch rate that is less than about 2.5 Å

/s as measured in a solution of 1;

100 of HF to water (0.5 wt. % dHF) acid;

an electrical leakage of less than about 1 e-8 Å

/cm² up to 6 MV/cm; and

a hydrogen impurity of less than about 4 e 21 at/cc as measured by SIMS.

12. A composition for depositing a silicon oxide film or a carbon doped silicon oxide film using a vapor deposition process, wherein the composition comprises:

at least one silicon precursor having a structure represented by Formula A;

13. The composition of claim 12, wherein the at least one compound is selected from the group consisting of 1-dimethylamino-4,4-dimethyl-1,4-disilapentane, 1-diethylamino-4,4-dimethyl-1,4-disilapentane, 1-ethylmethylamino-4,4-dimethyl-1,4-disilapentane, 1-di-iso-propylamino-4,4-dimethyl-1,4-disilapentane, 1-di-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-piperindino-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-piperindino-sec-butylamino-4,4-dimethyl-1,4-disilapentane, 1-pyrrolidino-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpyrrolidino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylmethylamino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylethylamino-4,4-dimethyl-1,4-disilapentane, 1-cyclohexyl-iso-propylamino-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-1-methyl-4,4-diethyl-1,4-disilapentane, 1-ethylmethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-di-iso-propylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-di-sec-butylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-piperindino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpiperindino-sec-butylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-pyrrolidino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-2,5-dimethylpyrrolidino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylmethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexylethylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-cyclohexyl-iso-propylamino-1-methyl-4,4-dimethyl-1,4-disilapentane, 1-dimethylamino-5,5-dimethyl-1,5-disilahexane, 1-diethylamino-5,5-dimethyl-1,5-disilahexane, 1-ethylmethylamino-4,4-dimethyl-4,4-dimethyl-1,5-disilahexane, 1-di-iso-propylamino-5,5-dimethyl-1,5-disilahexane, 1-di-sec-butylamino-5,5-dimethyl-1,5-disilahexane, 1-piperindino-5,5-dimethyl-1,5-disilahexane, 1-2,6-dimethylpiperindino-5,5-dimethyl-1,5-disilahexane, 1-pyrrolidino-5,5-dimethyl-1,5-disilahexane, 1-2,5-dimethylpyrrolidino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylmethylamino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylethylamino-5,5-dimethyl-1,5-disilahexane, 1-cyclohexyl-iso-propylamino-5,5-dimethyl-1,5-disilahexane, 1-dimethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-diethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-ethylmethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-di-iso-propylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-di-sec-butylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-piperindino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-2,6-dimethylpiperindino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-pyrrolidino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-2,5-dimethylpyrrolidino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylmethylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, 1-cyclohexylethylamino-1-methyl5,5-dimethyl-1,5-disilahexane, 1-cyclohexyl-iso-propylamino-1-methyl-5,5-dimethyl-1,5-disilahexane, and combinations thereof.

14. The composition of claim 12, wherein the composition is substantially free of halides.

15. The composition of claim 14, wherein the composition is substantially free of chloride ions and the concentration of chloride ions is less than 50 ppm measured by ICP-MS.

16. The composition of claim 15, wherein the chloride ion concentration is less than 10 ppm measured by ICP-MS.

17. The composition of claim 16, wherein the chloride ion concentration is less than 5 ppm measured by ICP-MS.

18. The composition of claim 12 wherein the composition is substantially free of one or more impurities selected from the group consisting of a halide, metal ions, metal, and combinations thereof.