Radiation imaging system

• US 10,466,370 B1
• Filed: 07/16/2018
• Issued: 11/05/2019
• Est. Priority Date: 07/16/2018
• Status: Active Grant

• Current Assignee: Vieworks Co., Ltd.
• Original Assignee: Vieworks Co., Ltd.
• Inventors: Lee, Denny Lap Yen
• Primary Examiner(s): Taningco, Marcus H
• Assistant Examiner(s): Gutierrez, Gisselle M
• Application Number:
  US16/036,856
• Time in Patent Office: 477 Days
• Field of Search: 25037009
• CPC Class Codes: G01T 1/24 with semiconductor detectors
• CPC Class Codes: G01T 1/246 utilizing latent read-out, e.g. charge stored and read-out later
• CPC Class Codes: G01T 1/247 Detector read-out circuitry for processing gain or off-set correction H04N

Abstract

A radiation imaging system of the present invention has an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, an array of pixel units electrically coupled to the electrical insulation layer, and an array of transistors connected to the array of pixel units.

Claims

1. A radiation imaging system comprising:

an electrical insulation layer having a top surface and a bottom surface;

a top electrode on the top surface of the electrical insulation layer; and

a plurality of pixel units electrically coupled to the electrical insulation layer,

wherein each of the plurality of pixel units comprises a charge collection electrode, and

wherein the charge collection electrode is disposed at the bottom surface of the electrical insulation layer within the electrical insulation layer.

2. The radiation imaging system as claimed in claim 1, wherein each of the plurality of pixel units further comprises a charge storage capacitor and at least one transistor.

3. The radiation imaging system as claimed in claim 2, wherein the plurality of pixel units are disposed at the bottom surface of the electrical insulation layer.

4. The radiation imaging system as claimed in claim 2, wherein the transistor is coupled between the charge collection electrode and a charge integrating amplifier.

5. The radiation imaging system as claimed in claim 1, wherein a thickness of the electrical insulation layer is at least about 0.1 micrometer.