Opto-electronic system including optical input/output device
First Claim
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1. An opto-electronic system comprising:
- a plurality of signal processing chips, each of the signal processing chips comprising;
a bulk silicon substrate;
a signal processing device integrated on the bulk silicon substrate; and
a vertical-input light detection element array, and a vertical-output light source element array that are connected to the signal processing device and are both monolithically integrated on the bulk silicon substrate,wherein the vertical-input light detection element array is comprised of an active layer grown directly on the bulk silicon substrate,wherein the vertical-output light source element array includes a monolithic light output device structure, based on a III-V compound semiconductor active layer directly monolithic-integrated on the bulk silicon substrate, andwherein the plurality of signal processing chips are three-dimensionally stacked; and
wherein the vertical-input light detection element arrays and the vertical-output light source element arrays of the signal processing chips face each other in contactless one-to-one correspondence such that the plurality of signal processing chips are three-dimensionally optically coupled to each other.
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Abstract
Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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Citations
7 Claims
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1. An opto-electronic system comprising:
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a plurality of signal processing chips, each of the signal processing chips comprising; a bulk silicon substrate; a signal processing device integrated on the bulk silicon substrate; and a vertical-input light detection element array, and a vertical-output light source element array that are connected to the signal processing device and are both monolithically integrated on the bulk silicon substrate, wherein the vertical-input light detection element array is comprised of an active layer grown directly on the bulk silicon substrate, wherein the vertical-output light source element array includes a monolithic light output device structure, based on a III-V compound semiconductor active layer directly monolithic-integrated on the bulk silicon substrate, and wherein the plurality of signal processing chips are three-dimensionally stacked; and wherein the vertical-input light detection element arrays and the vertical-output light source element arrays of the signal processing chips face each other in contactless one-to-one correspondence such that the plurality of signal processing chips are three-dimensionally optically coupled to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification