Opto-electronic system including optical input/output device

• US 10,466,413 B2
• Filed: 05/30/2017
• Issued: 11/05/2019
• Est. Priority Date: 05/23/2013
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Gyungock, Park, Hyundai, Kim, In Gyoo, Kim, Sang Hoon, Jang, Ki Seok, Kim, Sang Gi, Joo, Jiho, Choi, Yongseok, Kwon, Hyuk Je, Park, Jaegyu, Kim, Sun Ae, Oh, Jin Hyuk, Kwack, Myung joon
• Primary Examiner(s): Anya, Igwe U
• Application Number:
  US15/607,717
• Publication Number:
  US 20170261705A1
• Time in Patent Office: 889 Days
• Field of Search: 257 84
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02B 6/4206 Optical features G02B6/4207, G02B6/421 take precedence
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Abstract

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Claims

1. An opto-electronic system comprising:

a plurality of signal processing chips, each of the signal processing chips comprising;

a bulk silicon substrate;

a signal processing device integrated on the bulk silicon substrate; and

a vertical-input light detection element array, and a vertical-output light source element array that are connected to the signal processing device and are both monolithically integrated on the bulk silicon substrate,

wherein the vertical-input light detection element array is comprised of an active layer grown directly on the bulk silicon substrate,

wherein the vertical-output light source element array includes a monolithic light output device structure, based on a III-V compound semiconductor active layer directly monolithic-integrated on the bulk silicon substrate, and

wherein the plurality of signal processing chips are three-dimensionally stacked; and

wherein the vertical-input light detection element arrays and the vertical-output light source element arrays of the signal processing chips face each other in contactless one-to-one correspondence such that the plurality of signal processing chips are three-dimensionally optically coupled to each other.

2. The opto-electronic system of claim 1, wherein the vertical-output light source element array includes the III-V compound semiconductor light source active layer wafer-bonded to the bulk silicon substrate and device-fabricated on the bulk silicon substrate.

3. The opto-electronic system of claim 1, wherein the signal processing device includes a central processing unit (CPU), a memory circuit, a data bus interface circuit, a peripheral control device, a user definition application-specific integrated circuit (ASIC), or an optical communication circuit.

4. The opto-electronic system of claim 1, the vertical-input light detection element array having vertical-input light detection elements each including a photodiode.

5. The opto-electronic system of claim 4, wherein the photodiode includes a silicon-based light absorption layer.

6. The opto-electronic system of claim 5, wherein the silicon-based light absorption layer is a germanium-on-silicon layer.

7. The opto-electronic system of claim 1, wherein

a first array of the vertical-input light detection element arrays is adjacent to a first array of the vertical-output light source element arrays, on a first same substrate,

a second array of the vertical-input light detection element arrays is adjacent to a second array of the vertical-output light source element arrays, on a second same substrate,

the first array of the vertical-input light detection element arrays faces the second array of the vertical-output light source element arrays in contactless one-to-one correspondence, and

the first array of the vertical-output light source element arrays faces the second array of the vertical-output light detection element arrays in contactless one-to-one correspondence.