Method of modeling a mask having patterns with arbitrary angles
First Claim
1. A method, comprising:
- receiving a mask layout;
generating a two-dimensional kernel based on a set of pre-selected mask layout samples;
applying the two-dimensional kernel to the mask layout to obtain a correction field for the mask layout, wherein the applying the two-dimensional kernel includes;
building an orientation map for the mask layout, the orientation map including an orientation angle φ
for each edge segment of an edge of the mask layout, andapplying the two-dimensional kernel to the edge according to the orientation map;
determining a near field of the mask layout based at least in part on the correction field;
evaluating a simulated device layout based on the near field of the mask layout against a design rule;
refining the mask layout based on the evaluation; and
fabricating a wafer using a mask with the refined mask layout.
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Accused Products
Abstract
A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on a set of processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.
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Citations
20 Claims
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1. A method, comprising:
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receiving a mask layout; generating a two-dimensional kernel based on a set of pre-selected mask layout samples; applying the two-dimensional kernel to the mask layout to obtain a correction field for the mask layout, wherein the applying the two-dimensional kernel includes; building an orientation map for the mask layout, the orientation map including an orientation angle φ
for each edge segment of an edge of the mask layout, andapplying the two-dimensional kernel to the edge according to the orientation map; determining a near field of the mask layout based at least in part on the correction field; evaluating a simulated device layout based on the near field of the mask layout against a design rule; refining the mask layout based on the evaluation; and fabricating a wafer using a mask with the refined mask layout. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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receiving a mask layout, the mask layout containing a non-Manhattan pattern; processing the mask layout; generating a two-dimensional kernel based on a set of processed pre-selected mask layout samples, wherein the two-dimensional kernels each have a respective rotational symmetry; applying the two-dimensional kernel to an edge segment of the non-Manhattan pattern having an orientation angle φ
to obtain a correction field for the non-Manhattan pattern represented by a modified kernel, wherein the modified kernel includes e−
iφ
; anddetermining a near field of the non-Manhattan pattern based at least in part on the correction field; obtaining a final resist image of the non-Manhattan pattern based on the near field; evaluating the final resist image against a design rule; refining the mask layout based on the evaluation; and fabricating a wafer using a mask with the refined mask layout. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method, comprising:
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generating a two-dimensional kernel, wherein the generating includes; receiving a processed pre-selected mark layout sample having a first non-Manhattan pattern; identifying a first set of edges of the first non-Manhattan pattern and an orientation angle for each of the first set; generating the two-dimensional kernel as a first function independent of the orientation angle for the each of the first set; receiving a mask layout, the mask layout containing a second non-Manhattan pattern; processing the mask layout; identifying a second set of edges of the second non-Manhattan pattern and an orientation angle for each of the second set; applying the two-dimensional kernel to each of the second set by convolving the two-dimensional kernel with a second function of the orientation angle for the each of the second set to obtain a correction field for the second non-Manhattan pattern; applying a thin mask model to the second non-Manhattan pattern, the thin mask model containing a binary modeling of the second non-Manhattan pattern; determining a near field of the second non-Manhattan pattern by applying the correction field to the second non-Manhattan pattern having the thin mask model applied thereon; applying an optical model to the near field to obtain an aerial image on a wafer; applying a resist model to the aerial image to obtain a final resist image on the wafer; evaluating the final resist image against a design rule; refining the mask layout based on the evaluation; and fabricating a wafer using a mask with the refined mask layout. - View Dependent Claims (18, 19, 20)
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Specification