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Method of modeling a mask having patterns with arbitrary angles

  • US 10,466,586 B2
  • Filed: 08/02/2017
  • Issued: 11/05/2019
  • Est. Priority Date: 11/29/2016
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • receiving a mask layout;

    generating a two-dimensional kernel based on a set of pre-selected mask layout samples;

    applying the two-dimensional kernel to the mask layout to obtain a correction field for the mask layout, wherein the applying the two-dimensional kernel includes;

    building an orientation map for the mask layout, the orientation map including an orientation angle φ

    for each edge segment of an edge of the mask layout, andapplying the two-dimensional kernel to the edge according to the orientation map;

    determining a near field of the mask layout based at least in part on the correction field;

    evaluating a simulated device layout based on the near field of the mask layout against a design rule;

    refining the mask layout based on the evaluation; and

    fabricating a wafer using a mask with the refined mask layout.

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