Method for forming spacers using silicon nitride film for spacer-defined multiple patterning

• US 10,468,251 B2
• Filed: 07/14/2017
• Issued: 11/05/2019
• Est. Priority Date: 02/19/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Ishikawa, Dai, Fukazawa, Atsuki, Watarai, Toshiharu
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US15/650,686
• Publication Number:
  US 20170316940A1
• Time in Patent Office: 844 Days
• Field of Search: None
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0335 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3088 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

Claims

1. A method of forming spacers for spacer-defined multiple patterning (SDMP) by plasma-enhanced atomic layer deposition (PEALD) without forming sloped shoulders on top of the spacers, comprising steps of:

(i) providing a template having a surface patterned by a mandrel formed on an underlying layer in a reaction space;

(ii) depositing a pattern transfer film by plasma-enhanced atomic layer deposition (PEALD) on the entire patterned surface of the template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200°

C. or less using anisotropic ion bombardment by a plasma in a manner lowering film quality at a portion of the pattern transfer film formed on a top of the mandrel than film quality at a vertical portion of the pattern transfer film, wherein a boundary between the portion of the pattern transfer film on the top of the mandrel and the vertical portion of the pattern transfer film is upwardly inclined from an inner part to an outer part of the vertical portion such that in step (iii), the portion of the pattern transfer film formed on the top of the mandrel is more easily etched than the vertical portion of the pattern transfer film, said pattern transfer film being a conformal silicon nitride film and having a thickness smaller than a width of the mandrel;

(iii) dry-etching the template whose entire upper surface is covered with the pattern transfer film using a fluorocarbon as an etchant by anisotropic dry etching wherein an exposed surface and a horizontal portion receive higher ion irradiation for etching than does a vertical portion so that the outer part of the vertical portion of the pattern transfer film receives higher ion irradiation than does the inner part of the vertical portion of the pattern transfer film when etching progresses, and thereby selectively removing a portion of the pattern transfer film formed on the top of the mandrel and the horizontal portion of the pattern transfer film while leaving the mandrel as a core material and the vertical portion of the pattern transfer film as a vertical spacer except for the boundary between the horizontal portion and the vertical portion wherein a top of the vertical spacer is flat to the extent that spacer-defined multiple patterning can be performed using the vertical spacer with the top; and

(iv) dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on the underlying layer.

2. The method according to claim 1, wherein the mandrel is constituted by a carbon-based material.

3. The method according to claim 1, wherein in step (ii), PEALD uses a capacitively coupled plasma (CCP) and is conducted by applying 300 W or less of RF power in the reaction space.

4. The method according to claim 1, wherein in step (ii), the pattern transfer film has a conformality of 80% to 100%.

5. The method according to claim 1, wherein in step (iii), the fluorocarbon is CHF₃ or CF₄.

6. The method according to claim 1, wherein in step (iv), the core material is etched using Ar/O₂ or O₂ as an etchant.

7. The method according to claim 1, wherein the pattern transfer film is a single silicon nitride film deposited under same conditions.

8. The method according to claim 1, further comprising (v) dry-etching the underlying layer using the vertical spacer as a mask.

9. The method according to claim 8, wherein SDMP is space-defined quadruple patterning (SDQP), wherein after step (iv) before step (v), steps in a depositing-etching cycle similar to steps (ii) to (iv) are repeated.