Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
First Claim
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1. A method for forming a metallic film on a substrate by cyclical deposition, the method comprising:
- contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one bidentate ligand and at least one of copper, nickel or cobalt to form metal-containing molecules on a surface of the substrate, wherein the non-halogen containing metal precursor comprises at least one ligand bonded to a metal atom through at least one oxygen atom; and
contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine precursor comprising a branch-chained allyl group or sec- or tert-isomer of alkyl group of at least four carbon atoms,wherein the step of contacting the substrate with a second reactant immediately follows the step of contacting the substrate with a first reactant or immediately follows an intervening purge following the step of contacting the substrate with the first reactant.
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Abstract
Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
2552 Citations
20 Claims
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1. A method for forming a metallic film on a substrate by cyclical deposition, the method comprising:
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contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one bidentate ligand and at least one of copper, nickel or cobalt to form metal-containing molecules on a surface of the substrate, wherein the non-halogen containing metal precursor comprises at least one ligand bonded to a metal atom through at least one oxygen atom; and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine precursor comprising a branch-chained allyl group or sec- or tert-isomer of alkyl group of at least four carbon atoms, wherein the step of contacting the substrate with a second reactant immediately follows the step of contacting the substrate with a first reactant or immediately follows an intervening purge following the step of contacting the substrate with the first reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 19, 20)
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10. A method for forming a metallic film on a substrate by cyclical deposition, the method comprising:
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contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one bidentate ligand and at least one of copper, nickel or cobalt to form metal-containing molecules on a surface of the substrate, wherein the at least one bidentate ligand is bonded through at least one nitrogen atom and bonded through at least one atom other than nitrogen in the bidentate ligand; and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine precursor comprising a branch-chained allyl group or sec- or tert-isomer of alkyl group of at least four carbon atoms, wherein the step of contacting the substrate with a second reactant immediately follows the step of contacting the substrate with a first reactant or immediately follows an intervening purge following the step of contacting the substrate with the first reactant. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification