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Water-free etching methods

  • US 10,468,267 B2
  • Filed: 10/24/2017
  • Issued: 11/05/2019
  • Est. Priority Date: 05/31/2017
  • Status: Active Grant
First Claim
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1. An etching method comprising:

  • flowing a plasma-free fluorine-containing precursor into a processing region of a semiconductor processing chamber while maintaining the processing region plasma free, wherein the processing region houses a substrate comprising a region of exposed oxide and an exposed region of metal-containing material;

    while flowing the plasma-free fluorine-containing precursor into the processing region, providing a hydrogen-containing precursor to the processing region to produce an etchant;

    condensing the hydrogen-containing precursor on the region of exposed oxide; and

    removing at least a portion of the exposed oxide.

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